Record link: 
https://doi.org/10.34726/hss.2026.119184
http://hdl.handle.net/20.500.12708/227977
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Title: 
Characterization of electrically active dislocations in GaN by means of analytical TEM
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Citation: 
Scales, Z. (2026). Characterization of electrically active dislocations in GaN by means of analytical TEM [Dissertation, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2026.119184
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reposiTUm DOI: 
10.34726/hss.2026.119184
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CatalogPlus: 
AC17856086
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Publication Type: 
Thesis - Dissertation
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Language: 
English
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Authors: 
Scales, Ze 
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Advisor: 
Stöger-Pollach, Michael 
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Organisational Unit: 
E138 - Institut für Festkörperphysik 
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Date (published): 
2026
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Number of Pages: 
148
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Keywords: 
GaN; Elektronenmikroskopie
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GaN; electron microscopy
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Additional information: 
Arbeit an der Bibliothek noch nicht eingelangt - Daten nicht geprueft - gesperrte Arbeit (bis 2028-04-13+02:00)
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License: 
In Copyright
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Appears in Collections:
Thesis

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