Title: Monolithic axial and radial metal–semiconductor nanowire heterostructures
Language: English
Authors: Sistani, Masiar  
Luong, Minh Anh 
Den Hertog, Martien 
Robin, Eric 
Spies, Maria 
Fernandez, Bruno 
Yao, Jun 
Bertagnolli, Emmerich 
Lugstein, Alois 
Category: Short/Brief/Rapid Communication
Issue Date: 2018
Sistani, M., Luong, M. A., Den Hertog, M., Robin, E., Spies, M., Fernandez, B., Yao, J., Bertagnolli, E., & Lugstein, A. (2018). Monolithic axial and radial metal–semiconductor nanowire heterostructures. Nano Letters, 18(12), 7692–7697. https://doi.org/10.1021/acs.nanolett.8b03366
Journal: Nano Letters 
ISSN: 1530-6984
The electrical and optical properties of low-dimensional nanostructures depend critically on size and geometry and may differ distinctly from those of their bulk counterparts. In particular, ultrathin semiconducting layers as well as nanowires have already proven the feasibility to realize and study quantum size effects enabling novel ultrascaled devices. Further, plasmonic metal nanostructures attracted recently a lot of attention because of appealing near-field-mediated enhancement effects. Thus, combining metal and semiconducting constituents in quasi one-dimensional heterostructures will pave the way for ultrascaled systems and high-performance devices with exceptional electrical, optical, and plasmonic functionality. This Letter reports on the sophisticated fabrication and structural properties of axial and radial Al–Ge and Al–Si nanowire heterostructures, synthesized by a thermally induced exchange reaction of single-crystalline Ge–Si core–shell nanowires and Al pads. This enables a self-aligned metallic contact formation to Ge segments beyond lithographic limitations as well as ultrathin semiconducting layers wrapped around monocrystalline Al core nanowires. High-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and μ-Raman measurements proved the composition and perfect crystallinity of these metal–semiconductor nanowire heterostructures. This exemplary selective replacement of Ge by Al represents a general approach for the elaboration of radial and axial metal–semiconductor heterostructures in various Ge–semiconductor heterostructures.
Keywords: nanowire; metal-semiconductor heterostructure; germanium; aluminum; transmission electron microscopy
DOI: 10.1021/acs.nanolett.8b03366
Library ID: AC15222945
URN: urn:nbn:at:at-ubtuw:3-4507
Organisation: E138 - Institut für Festkörperphysik 
Publication Type: Article
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