Record link: 
http://hdl.handle.net/20.500.12708/631
https://doi.org/10.34726/2507
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Title: 
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters
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Citation: 
Seifner, M. S., Dijkstra, A., Bernardi, J., Steiger-Thirsfeld, A., Sistani, M., Lugstein, A., Haverkort, J., & Barth, S. (2019). Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters. Journal of Proteome Research, 13(7), 8047–8054. https://doi.org/10.34726/2507
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reposiTUm DOI: 
10.34726/2507
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Publisher DOI: 
10.1021/acsnano.9b02843
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CatalogPlus: 
AC15427379
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Seifner, Michael S. 
Dijkstra, Alain 
Bernardi, Johannes 
Steiger-Thirsfeld, Andreas 
Sistani, Masiar 
Lugstein, Alois 
Haverkort, Jos 
Barth, Sven 
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Organisational Unit: 
E165 - Institut für Materialchemie 
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Journal: 
Journal of Proteome Research 
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ISSN: 
1535-3893
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Date (published): 
23-Jun-2019
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Number of Pages: 
8
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Publisher: 
AMER CHEMICAL SOC
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Peer reviewed: 
Yes
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Keywords: 
semiconductor; nanowires; epitaxy; direct band gap; germanium; tin
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Project (external): 
German Research Foundation (DFG)
Fonds zur Förderung der Wissenschaftlichen Forschung (FWF)
European Union’s Horizon 2020
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Project ID: 
413940754
P 28524
735008
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Additional information: 
The final publication is available via <a href="https://doi.org/10.1021/acsnano.9b02843" target="_blank">https://doi.org/10.1021/acsnano.9b02843</a>.
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License: 
In Copyright
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2 20.500.12708/631 Andrae, Magdalena 2022-07-24 16:07:09.755 generating DOI
1 20.500.12708/631.1 Bibliothek, API User 2020-06-27 19:18:25.0
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