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Record link: 
http://hdl.handle.net/20.500.12708/72332
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Title: 
Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress
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Citation: 
Starkov, I., & Ceric, H. (2011). Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress. In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (pp. 90–91). http://hdl.handle.net/20.500.12708/72332
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Publication Type: 
Inproceedings - Poster Contribution
en
Authors: 
Starkov, Ivan 
Ceric, Hajdin 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Extended Abstracts of 2011 International Conference on Solid State Devices and Materials 
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Date (published): 
2011
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Event name: 
International Conference on Solid State Devices and Materials 
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Event date: 
28-Sep-2011 - 30-Sep-2011
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Event place: 
Nagoya, Japan, Non-EU
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Number of Pages: 
2
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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