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Record link: 
http://hdl.handle.net/20.500.12708/90939
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Title: 
Transient capacitance analysis of thin carbon doped GaN layers
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Citation: 
Koller, C., Pobegen, G., Ostermaier, C., Huber, M., & Pogany, D. (2017). Transient capacitance analysis of thin carbon doped GaN layers. Conference of Nitride Semiconductors (ICNS), Las Vegas, USA, Non-EU. http://hdl.handle.net/20.500.12708/90939
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Publication Type: 
Presentation - Conference presentation
en
Authors: 
Koller, Christian 
Pobegen, Gregor 
Ostermaier, C 
Huber, M. 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2017
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Event name: 
Conference of Nitride Semiconductors (ICNS) 
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Event date: 
16-Sep-2007 - 21-Sep-2007
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Event place: 
Las Vegas, USA, Non-EU
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Presentation

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