| Preview | Authors / Editors | Title | Type | Issue Date |
1 | | Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor | A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs | Konferenzbeitrag Inproceedings | 2014 |
2 | | Waltl, Michael ; Gös, Wolfgang ; Rott, K. ; Reisinger, H. ; Grasser, Tibor | A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case | Konferenzbeitrag Inproceedings | 2014 |
3 | | Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Franco, J. ; Kaczer, Ben | A unified perspective of RTN and BTI | Konferenzbeitrag Inproceedings | 2014 |
4 | | Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben | Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy | Konferenzbeitrag Inproceedings | 2013 |
5 | | Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang | An Energy-Level Perspective of Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2008 |
6 | | Starkov, Ivan ; Enichlmair, H. ; Tyaginov, S. E. ; Grasser, Tibor | Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress | Konferenzbeitrag Inproceedings | 2012 |
7 | | Kaczer, Ben ; Mahato, S. ; Valduga de Almeida Camargo, V. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Grasser, Tibor ; Catthoor, F. ; Dobrovolny, P. ; Zuber, P. ; Wirth, G.I. ; Groeseneken, G. | Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations | Konferenzbeitrag Inproceedings | 2011 |
8 | | Grasser, Tibor | Charge Trapping in Oxides From RTN to BTI | Konferenzbeitrag Inproceedings | 2011 |
9 | | Toledano-Luque, M. ; Kaczer, Ben ; Simoen, E. ; Degraeve, R. ; Franco, J. ; Roussel, Ph. J. ; Grasser, Tibor ; Groeseneken, G. | Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs | Konferenzbeitrag Inproceedings | 2012 |
10 | | Weckx, P. ; Kaczer, Ben ; Toledano-Luque, M. ; Grasser, Tibor ; Roussel, Ph. J. ; Kukner, H. ; Raghavan, P. ; Catthoor, F. ; Groeseneken, G. | Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM | Konferenzbeitrag Inproceedings | 2013 |
11 | | Pobegen, G. ; Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor | Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness | Konferenzbeitrag Inproceedings | 2010 |
12 | | Pobegen, Gregor ; Nelhiebel, Michael ; Grasser, Tibor | Detrimental impact of hydrogen passivation on NBTI and HC degradation | Konferenzbeitrag Inproceedings | 2013 |
13 | | Aichinger, T. ; Lenahan, P. M. ; Grasser, Tibor ; Pobegen, G. ; Nelhiebel, M. | Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study | Konferenzbeitrag Inproceedings | 2012 |
14 | | Grasser, Tibor | Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales | Konferenzbeitrag Inproceedings | 2013 |
15 | | Aichinger, T. ; Puchner, S. ; Nelhiebel, M. ; Grasser, Tibor ; Hutter, H. | Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress | Konferenzbeitrag Inproceedings | 2010 |
16 | | Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Mitard, J. ; Ragnarsson, L. A. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Horiguchi, N. ; Groeseneken, G. ; Bukhori, Muhammad Faiz ; Grasser, Tibor ; Asenov, A | Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs | Konferenzbeitrag Inproceedings | 2012 |
17 | | Franco, J. ; Kaczer, Ben ; Cho, M. ; Eneman, G. ; Groeseneken, G. ; Grasser, Tibor | Improvements of NBTI Reliability in SiGe p-FETs | Konferenzbeitrag Inproceedings | 2010 |
18 | | Kaczer, Ben ; Chen, C. ; Weckx, P. ; Roussel, Ph. J. ; Toledano-Luque, M. ; Cho, M. ; Watt, J. T. ; Chanda, K. ; Groeseneken, G. ; Grasser, Tibor | Maximizing reliable performance of advanced CMOS circuits-A case study | Konferenzbeitrag Inproceedings | 2014 |
19 | | Grasser, Tibor ; Kaczer, Ben ; Reisinger, H. ; Wagner, Paul-Jürgen ; Toledano-Luque, M. | On the Frequency Dependence of the Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2012 |
20 | | Schanovsky, Franz ; Grasser, Tibor | On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2012 |