Proceedings of the International Reliability Physics Symposium (IRPS)

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Proceedings of the International Reliability Physics Symposium (IRPS)

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PreviewAuthors / EditorsTitleTypeIssue Date
1Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
2Waltl, Michael ; Gös, Wolfgang ; Rott, K. ; Reisinger, H. ; Grasser, Tibor A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS CaseKonferenzbeitrag Inproceedings2014
3Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Franco, J. ; Kaczer, Ben A unified perspective of RTN and BTIKonferenzbeitrag Inproceedings2014
4Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect SpectroscopyKonferenzbeitrag Inproceedings2013
5Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang An Energy-Level Perspective of Bias Temperature InstabilityKonferenzbeitrag Inproceedings2008
6Starkov, Ivan ; Enichlmair, H. ; Tyaginov, S. E. ; Grasser, Tibor Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier StressKonferenzbeitrag Inproceedings2012
7Kaczer, Ben ; Mahato, S. ; Valduga de Almeida Camargo, V. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Grasser, Tibor ; Catthoor, F. ; Dobrovolny, P. ; Zuber, P. ; Wirth, G.I. ; Groeseneken, G. Atomistic Approach to Variability of Bias-Temperature Instability in Circuit SimulationsKonferenzbeitrag Inproceedings2011
8Grasser, Tibor Charge Trapping in Oxides From RTN to BTIKonferenzbeitrag Inproceedings2011
9Toledano-Luque, M. ; Kaczer, Ben ; Simoen, E. ; Degraeve, R. ; Franco, J. ; Roussel, Ph. J. ; Grasser, Tibor ; Groeseneken, G. Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETsKonferenzbeitrag Inproceedings2012
10Weckx, P. ; Kaczer, Ben ; Toledano-Luque, M. ; Grasser, Tibor ; Roussel, Ph. J. ; Kukner, H. ; Raghavan, P. ; Catthoor, F. ; Groeseneken, G. Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAMKonferenzbeitrag Inproceedings2013
11Pobegen, G. ; Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor Dependence of the Negative Bias Temperature Instability on the Gate Oxide ThicknessKonferenzbeitrag Inproceedings2010
12Pobegen, Gregor ; Nelhiebel, Michael ; Grasser, Tibor Detrimental impact of hydrogen passivation on NBTI and HC degradationKonferenzbeitrag Inproceedings2013
13Aichinger, T. ; Lenahan, P. M. ; Grasser, Tibor ; Pobegen, G. ; Nelhiebel, M. Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR StudyKonferenzbeitrag Inproceedings2012
14Grasser, Tibor Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of TimescalesKonferenzbeitrag Inproceedings2013
15Aichinger, T. ; Puchner, S. ; Nelhiebel, M. ; Grasser, Tibor ; Hutter, H. Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature StressKonferenzbeitrag Inproceedings2010
16Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Mitard, J. ; Ragnarsson, L. A. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Horiguchi, N. ; Groeseneken, G. ; Bukhori, Muhammad Faiz ; Grasser, Tibor ; Asenov, A Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETsKonferenzbeitrag Inproceedings2012
17Franco, J. ; Kaczer, Ben ; Cho, M. ; Eneman, G. ; Groeseneken, G. ; Grasser, Tibor Improvements of NBTI Reliability in SiGe p-FETsKonferenzbeitrag Inproceedings2010
18Kaczer, Ben ; Chen, C. ; Weckx, P. ; Roussel, Ph. J. ; Toledano-Luque, M. ; Cho, M. ; Watt, J. T. ; Chanda, K. ; Groeseneken, G. ; Grasser, Tibor Maximizing reliable performance of advanced CMOS circuits-A case studyKonferenzbeitrag Inproceedings2014
19Grasser, Tibor ; Kaczer, Ben ; Reisinger, H. ; Wagner, Paul-Jürgen ; Toledano-Luque, M. On the Frequency Dependence of the Bias Temperature InstabilityKonferenzbeitrag Inproceedings2012
20Schanovsky, Franz ; Grasser, Tibor On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2012