2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

View Statistics Email Alert RSS Feed

Book details Buch-Details

Book title Buchtitel
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 

Publications Publikationen

Results 1-15 of 15 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivityKonferenzbeitrag Inproceedings2014
2Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
3Goes, W. ; Waltl, M. ; Wimmer, Y. ; Rzepa, G. ; Grasser, T. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTIKonferenzbeitrag Inproceedings2014
4Filipovic, Lidija ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans BTB tunneling in InAs/Si heterojunctionsKonferenzbeitrag Inproceedings2014
5Rupp, Karl ; Bina, Markus ; Wimmer, Yannick ; Jungel, Ansgar ; Grasser, Tibor Cell-centered finite volume schemes for semiconductor device simulationKonferenzbeitrag Inproceedings2014
6Ceric, H. ; Zisser, W. H. ; Rovitto, M. ; Selberherr, S. Electromigration in solder bumps: A mean-time-to-failure TCAD studyKonferenzbeitrag Inproceedings2014
7Zisser, W. H. ; Ceric, H. ; Weinbub, J. ; Selberherr, S. Electromigration induced resistance increase in open TSVsKonferenzbeitrag Inproceedings2014
8Osintsev, Dmitri ; Sverdlov, Viktor ; Windbacher, Thomas ; Selberherr, Siegfried Increasing mobility and spin lifetime with shear strain in thin silicon filmsKonferenzbeitrag Inproceedings2014
9Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried Influence of device geometry on the non-volatile magnetic flip flop characteristicsKonferenzbeitrag Inproceedings2014
10Baumgartner, O. ; Stanojevic, Z. ; Filipovic, L. ; Grill, A. ; Grasser, T. ; Kosina, H. ; Karner, M. Investigation of quantum transport in nanoscaled GaN high electron mobility transistorsKonferenzbeitrag Inproceedings2014
11Stanojevic, Z. ; Baumgartner, O. ; Karner, M. ; Filipovic, L. ; Kernstock, C. ; Kosina, H. On the validity of momentum relaxation time in low-dimensional carrier gasesKonferenzbeitrag Inproceedings2014
12Rzepa, G. ; Goes, W. ; Rott, G. ; Rott, K. ; Karner, M. ; Kernstock, C. ; Kaczer, B. ; Reisinger, H. ; Grasser, T. Physical modeling of NBTI: From individual defects to devicesKonferenzbeitrag Inproceedings2014
13Rudolf, Florian ; Weinbub, Josef ; Rupp, Karl ; Morhammer, Andreas ; Selberherr, Siegfried Template-based mesh generation for semiconductor devicesKonferenzbeitrag Inproceedings2014
14Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. The Wigner Monte Carlo method for accurate semiconductor device simulationKonferenzbeitrag Inproceedings2014
15Filipovic, L. ; Rudolf, F. ; Baer, E. ; Evanschitzky, P. ; Lorenz, J. ; Roger, F. ; Singulani, A. ; Minixhofer, R. ; Selberherr, S. Three-dimensional simulation for the reliability and electrical performance of through-silicon viasKonferenzbeitrag Inproceedings2014