|
| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. | 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity | Konferenzbeitrag Inproceedings | 2014 |
| 2 | | Goes, W. ; Waltl, M. ; Wimmer, Y. ; Rzepa, G. ; Grasser, T. | Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI | Konferenzbeitrag Inproceedings | 2014 |
| 3 | | Filipovic, Lidija ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans | BTB tunneling in InAs/Si heterojunctions | Konferenzbeitrag Inproceedings | 2014 |
| 4 | | Rupp, Karl ; Bina, Markus ; Wimmer, Yannick ; Jungel, Ansgar ; Grasser, Tibor | Cell-centered finite volume schemes for semiconductor device simulation | Konferenzbeitrag Inproceedings | 2014 |
| 5 | | Ceric, H. ; Zisser, W. H. ; Rovitto, M. ; Selberherr, S. | Electromigration in solder bumps: A mean-time-to-failure TCAD study | Konferenzbeitrag Inproceedings | 2014 |
| 6 | | Zisser, W. H. ; Ceric, H. ; Weinbub, J. ; Selberherr, S. | Electromigration induced resistance increase in open TSVs | Konferenzbeitrag Inproceedings | 2014 |
| 7 | | Osintsev, Dmitri ; Sverdlov, Viktor ; Windbacher, Thomas ; Selberherr, Siegfried | Increasing mobility and spin lifetime with shear strain in thin silicon films | Konferenzbeitrag Inproceedings | 2014 |
| 8 | | Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried | Influence of device geometry on the non-volatile magnetic flip flop characteristics | Konferenzbeitrag Inproceedings | 2014 |
| 9 | | Baumgartner, O. ; Stanojevic, Z. ; Filipovic, L. ; Grill, A. ; Grasser, T. ; Kosina, H. ; Karner, M. | Investigation of quantum transport in nanoscaled GaN high electron mobility transistors | Konferenzbeitrag Inproceedings | 2014 |
| 10 | | Stanojevic, Z. ; Baumgartner, O. ; Karner, M. ; Filipovic, L. ; Kernstock, C. ; Kosina, H. | On the validity of momentum relaxation time in low-dimensional carrier gases | Konferenzbeitrag Inproceedings | 2014 |
| 11 | | Rzepa, G. ; Goes, W. ; Rott, G. ; Rott, K. ; Karner, M. ; Kernstock, C. ; Kaczer, B. ; Reisinger, H. ; Grasser, T. | Physical modeling of NBTI: From individual defects to devices | Konferenzbeitrag Inproceedings | 2014 |
| 12 | | Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor | A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs | Konferenzbeitrag Inproceedings | 2014 |
| 13 | | Rudolf, Florian ; Weinbub, Josef ; Rupp, Karl ; Morhammer, Andreas ; Selberherr, Siegfried | Template-based mesh generation for semiconductor devices | Konferenzbeitrag Inproceedings | 2014 |
| 14 | | Filipovic, L. ; Rudolf, F. ; Baer, E. ; Evanschitzky, P. ; Lorenz, J. ; Roger, F. ; Singulani, A. ; Minixhofer, R. ; Selberherr, S. | Three-dimensional simulation for the reliability and electrical performance of through-silicon vias | Konferenzbeitrag Inproceedings | 2014 |
| 15 | | Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, S. | The Wigner Monte Carlo method for accurate semiconductor device simulation | Konferenzbeitrag Inproceedings | 2014 |
