European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

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Description

Event name
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
 
Event type
Event for scientific audience
 
Start date
23-09-2019
End date
26-09-2019
 
Location
Maastricht
Country
Netherlands
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

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Author:  Grasser, Tibor

Results 1-13 of 13 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang An Energy-Level Perspective of Bias Temperature InstabilityKonferenzbeitrag Inproceedings2008
2Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, H. ; Park, J.M. ; Ceric, Hajdin ; Grasser, Tibor Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsKonferenzbeitrag Inproceedings2015
3Ayalew, Tesfaye ; Gehring, Andreas ; Grasser, Tibor ; Selberherr, Siegfried Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge TerminationPräsentation Presentation2004
4Tyaginov, S. E. ; Sverdlov, Viktor ; Gös, Wolfgang ; Grasser, Tibor Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage RateKonferenzbeitrag Inproceedings2009
5Ayalew, Tesfaye ; Gehring, Andreas ; Park, Jong Mun ; Grasser, Tibor ; Selberherr, Siegfried Improving SiC Lateral DMOSFET Reliability under High Field StressPräsentation Presentation2003
6Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2010
7Rott, Gunnar Andreas ; Rott, K. ; Reisinger, H. ; Gustin, W. ; Grasser, Tibor Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel TransistorsKonferenzbeitrag Inproceedings2014
8Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Reisinger, H. ; Grasser, Tibor On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature StressKonferenzbeitrag Inproceedings2009
9Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor On the Temperature Dependence of NBTI RecoveryPräsentation Presentation2008
10Grasser, Tibor Physical Mechanisms and Modeling of the Bias Temperature InstabilityPräsentation Presentation2009
11Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Grill, Alexander ; Stradiotto, Roberta ; Pobegen, Gregor ; Grasser, Tibor ; Pietschnig, R ; Pogany, Dionyz Review of bias-temperature instabilities at the III-N/dielectric interfacePräsentation Presentation2017
12Grasser, Tibor ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Kaczer, Ben The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature InstabilityPräsentation Presentation2010
13Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Bina, Markus ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor Understanding Correlated Drain and Gate Current FluctuationsKonferenzbeitrag Inproceedings2013