IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Grasser, Tibor
Author:  Tyaginov, Stanislav

Results 1-5 of 5 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
2Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: TheoryArtikel Article 2019
3Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article Aug-2020
4Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport EquationArtikel Article 2015
5Bina, Markus ; Tyaginov, Stanislav ; Franco, Jacopo ; Rupp, Karl ; Wimmer, Yannick ; Osintsev, Dmitry ; Kaczer, Ben ; Grasser, Tibor Predictive Hot-Carrier Modeling of n-Channel MOSFETsArtikel Article2014