Materials Science in Semiconductor Processing

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Journal description

Title Titel
Materials Science in Semiconductor Processing
 
e-ISSN
1873-4081
 
ISSN
1369-8001
 
Publisher Herausgeber
ELSEVIER SCI LTD
 
Publisher's Address Herausgeber Adresse
THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND, OXON, OX5 1GB
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 1-6 of 6 (Search time: 0.274 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Shawrav, M.M. ; Gökdeniz, Z.G. ; Wanzenboeck, H.D. ; Taus, P. ; Mika, J.K. ; Waid, S. ; Bertagnolli, E. Chlorine basedfocusedelectronbeaminducedetching:Anovelwayto patterngermaniumArtikel Article2016
2Triendl, F. ; Pfusterschmied, G. ; Pobegen, G. ; Schwarz, S. ; Artner, W. ; Konrath, J.P. ; Schmid, U. Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H-SiCArtikel Article2021
3Pfusterschmied, G. ; Triendl, F. ; Schneider, M. ; Schmid, U. Impact of Ar+ bombardment of 4H-SiC substrates on Schottky diode barrier heightsArtikel Article2021
4Gillinger, Manuel ; Markovic, A. ; Pfusterschmied, Georg ; Schneider, Michael ; Schmid, Ulrich Performance of thin AlxOy , SixNy and AlN passivation layers for high temperature SAW device applicationsArtikel Article2018
5Triendl, F. ; Pfusterschmied, G. ; Schwarz, S. ; Artner, W. ; Schmid, U. Si/4H-SiC heterostructure formation using metal-induced crystallizationArtikel Article2021
6Fischeneder, M. ; Wistrela, E. ; Bittner, A. ; Schneider, M. ; Schmid, U. Tailored wafer holder for a reliable deposition of sputtered aluminium nitride thin films at low temperaturesArtikel Article2017