Grasser, Tibor

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Grasser, Tibor
 
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Own Publications Eigene Publikationen

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Author:  Cervenka, Johann

Results 1-20 of 20 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Cervenka, Johann ; Kosik, Robert ; Vasicek, Martin-Thomas ; Gritsch, Markus ; Selberherr, Siegfried ; Grasser, Tibor Macroscopic Transport Models for Classical Device SimulationBook Contribution Buchbeitrag2023
2Illarionov, Yu.Yu. ; Vexler, M.I. ; Karner, M. ; Tyaginov, S.E. ; Cervenka, J. ; Grasser, T. TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS StructuresArtikel Article 2015
3Tyaginov, S. E. ; Illarionov, Yu. Yu. ; Vexler, M. I. ; Bina, M. ; Cervenka, J. ; Franco, J. ; Kaczer, B. ; Grasser, T. Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride DielectricArtikel Article2014
4Cervenka, Johann ; Steinmair, Alexander ; Park, Jong Mun ; Seebacher, E. ; Grasser, Tibor TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS TransistorsKonferenzbeitrag Inproceedings2012
5Vasicek, Martin ; Cervenka, Johann ; Esseni, David ; Palestri, Pierpaolo ; Grasser, Tibor Applicability of Macroscopic Transport Models to Decananometer MOSFETsArtikel Article2012
6Starkov, I. ; Tyaginov, S. ; Enichlmair, H. ; Cervenka, J. ; Jungemann, C. ; Carniello, S. ; Park, J. M. ; Ceric, H. ; Grasser, T. Hot-Carrier Degradation Caused Interface State Profile-Simulation versus ExperimentArtikel Article2011
7Vasicek, M. ; Sverdlov, V. ; Cervenka, J. ; Grasser, T. ; Kosina, H. ; Selberherr, S. Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments ModelsKonferenzbeitrag Inproceedings2010
8Starkov, Ivan ; Tyaginov, S. E. ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo SimulationsKonferenzbeitrag Inproceedings2010
9Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo SimulationsKonferenzbeitrag Inproceedings2010
10Starkov, Ivan ; Tyaginov, S. E. ; Enichlmair, H. ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor HC Degradation Model: Interface State Profile-Simulations vs. ExperimentKonferenzbeitrag Inproceedings2010
11Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2010
12Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, J.M. ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation ModelingArtikel Article2010
13Sverdlov, Viktor ; Vasicek, Martin ; Cervenka, Johann ; Grasser, Tibor ; Kosina, Hans ; Selberherr, Siegfried Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments ModelsKonferenzbeitrag Inproceedings2009
14Vasicek, M. ; Cervenka, J. ; Wagner, M. ; Karner, M. ; Grasser, T. A 2D Non-Parabolic Six-Moments ModelArtikel Article2008
15Vasicek, Martin ; Cervenka, Johann ; Wagner, Martin ; Karner, Markus ; Grasser, Tibor Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETsArtikel Article 2008
16Vasicek, Martin ; Cervenka, Johann ; Karner, Markus ; Grasser, Tibor Consistent higher-order transport models for SOI MOSFETsKonferenzbeitrag Inproceedings2008
17Vasicek, Martin ; Cervenka, Johann ; Karner, Markus ; Wagner, Martin ; Grasser, Tibor Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETsKonferenzbeitrag Inproceedings2007
18Vasicek, Martin ; Cervenka, Johann ; Wagner, Martin ; Karner, Markus ; Grasser, Tibor A 2D-Non-Parabolic Six Moments ModelKonferenzbeitrag Inproceedings2007
19Wagner, Martin ; Karner, Markus ; Cervenka, Johann ; Vasicek, Martin ; Kosina, Hans ; Holzer, Stefan ; Grasser, Tibor Quantum Correction for DG MOSFETsArtikel Article 2007
20Cervenka, J. ; Wessner, W. ; Al-Ani, E. ; Grasser, T. ; Selberherr, S. Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential EquationsArtikel Article 2006

Contributing Publications Mitbeteiligte Publikationen

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Author:  Cervenka, Johann

Results 1-2 of 2 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Cervenka, Johann ; Ceric, Hajdin ; Ertl, Otmar ; Selberherr, Siegfried Three-Dimensional Sacrificial EtchingKonferenzbeitrag Inproceedings2007
2Cervenka Johann - 2004 - Three-dimensional mesh Generation for device and...pdf.jpgCervenka, Johann Three-dimensional mesh Generation for device and process simulationThesis Hochschulschrift 2004