Name Card

Full name Familienname, Vorname
Sharma, Prateek
 

Own Publications Eigene Publikationen

Results 1-14 of 14 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Sharma Prateek - 2020 - Predictive and efficient modeling of hot carrier...pdf.jpgSharma, Prateek Predictive and efficient modeling of hot carrier degradation with drift-diffusion based carrier transport modelsThesis Hochschulschrift 2020
2Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Makarov, Alexander ; Vexler, Mikhail I. ; Kaczer, Ben ; Grasser, Tibor Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion ApproachArtikel Article 2017
3Tyaginov, S.E. ; Makarov, A. ; Jech, M. ; Franco, J. ; Sharma, P. ; Kaczer, B. ; Grasser, T. On the effect of interface traps on the carrier distribution function during hot-carrier degradationKonferenzbeitrag Inproceedings 2016
4Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Kaczer, Ben ; Makarov, Alexander ; Vexler, Mikhail I. ; Grasser, Tibor A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETsKonferenzbeitrag Inproceedings 2016
5Sharma, Prateek ; Tyaginov, Stanislav ; Jech, Markus ; Wimmer, Yannick ; Rudolf, Florian ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS DevicesArtikel Article 2016
6Tyaginov, Stanislav ; Jech, Markus ; Franco, Jacopo ; Sharma, Prateek ; Kaczer, Ben ; Grasser, Tibor Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETsArtikel Article 2016
7Jech, Markus ; Sharma, Prateek ; Tyaginov, Stanislav ; Rudolf, Florian ; Grasser, Tibor On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation ModelingArtikel Article 2016
8Tyaginov, S. ; Jech, M. ; Sharma, P. ; Franco, J. ; Kaczer, B. ; Grasser, T. On the temperature behavior of hot-carrier degradationKonferenzbeitrag Inproceedings2015
9Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor Predictive and efficient modeling of hot-carrier degradation in nLDMOS devicesKonferenzbeitrag Inproceedings2015
10Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion schemeKonferenzbeitrag Inproceedings2015
11Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, H. ; Park, J.M. ; Ceric, Hajdin ; Grasser, Tibor Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsKonferenzbeitrag Inproceedings2015
12Sharma, P. ; Tyaginov, S. ; Wimmer, Y. ; Rudolf, F. ; Rupp, K. ; Enichlmair, H. ; Park, J.-M. ; Ceric, H. ; Grasser, T. Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsArtikel Article 2015
13Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport EquationArtikel Article 2015
14Sharma, Prateek ; Jech, Markus ; Tyaginov, Stanislav ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, Hubert ; Park, Jong-Mun ; Grasser, Tibor Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approachKonferenzbeitrag Inproceedings2015