Name Card

Full name Familienname, Vorname
Bina, Markus
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 36 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Rupp Karl - 2016 - A review of recent advances in the spherical harmonics...pdf.jpgRupp, Karl ; Jungemann, C. ; Hong, S.-M. ; Bina, Markus ; Grasser, Tibor ; Jüngel, Ansgar A review of recent advances in the spherical harmonics expansion method for semiconductor device simulationArticle Artikel Sep-2016
2Schwiedrzik, Johann Jakob ; Gross, Thomas ; Bina, Markus ; Pretterklieber, Michael ; Zysset, Philippe K. ; Pahr, Dieter H. Experimental Validation of a Nonlinear μFE Model Based on Cohesive-Frictional Plasticity for Trabecular BoneArtikel Article 2016
3Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor Predictive and efficient modeling of hot-carrier degradation in nLDMOS devicesKonferenzbeitrag Inproceedings2015
4Kaczer, B. ; Franco, J. ; Cho, M. ; Grasser, T. ; Roussel, Ph. J. ; Tyaginov, S. ; Bina, M. ; Wimmer, Y. ; Procel, L. M. ; Trojman, L. ; Crupi, F. ; Pitner, G. ; Putcha, V. ; Weckx, P. ; Bury, E. ; Ji, Z. ; De Keersgieter, A. ; Chiarella, T. ; Horiguchi, N. ; Groeseneken, G. ; Thean, A. Origins and implications of increased channel hot carrier variability in nFinFETsKonferenzbeitrag Inproceedings2015
5Rupp, Karl ; Bina, Markus ; Morhammer, Andreas ; Grasser, Tibor ; Jüngel, Ansgar ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion MethodPräsentation Presentation2015
6Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Kaczer, Ben ; Grasser, Tibor On the Importance of Electron-Electron Scattering for Hot-Carrier DegradationArtikel Article 2015
7Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
8Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport EquationArtikel Article 2015
9Bina, Markus ; Rupp, Karl The Spherical Harmonics Expansion Method for Assessing Hot Carrier DegradationBuchbeitrag Book Contribution2015
10Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T. Physical modeling of hot-carrier degradation in nLDMOS transistorsKonferenzbeitrag Inproceedings2014
11Tyaginov, S. ; Bina, M. ; Franco, J. ; Wimmer, Y. ; Rudolf, F. ; Enichlmair, H. ; Park, J.M. ; Kaczer, B. ; Ceric, H. ; Grasser, T. Dominant mechanisms of hot-carrier degradation in short- and long-channel transistorsKonferenzbeitrag Inproceedings2014
12Tyaginov, S. E. ; Illarionov, Yu. Yu. ; Vexler, M. I. ; Bina, M. ; Cervenka, J. ; Franco, J. ; Kaczer, B. ; Grasser, T. Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride DielectricArtikel Article2014
13Bina, Markus ; Tyaginov, Stanislav ; Franco, Jacopo ; Rupp, Karl ; Wimmer, Yannick ; Osintsev, Dmitry ; Kaczer, Ben ; Grasser, Tibor Predictive Hot-Carrier Modeling of n-Channel MOSFETsArtikel Article2014
14Illarionov, Yury Yu. ; Bina, Markus ; Tyaginov, Stanislav E. ; Grasser, Tibor An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETsArtikel Article2014
15Tyaginov, S. E. ; Bina, Markus ; Franco, J. ; Osintsev, Dimitry ; Triebl, Oliver ; Kaczer, Ben ; Grasser, Tibor Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETsKonferenzbeitrag Inproceedings2014
16Tyaginov, S. E. ; Bina, Markus ; Franco, J. ; Kaczer, Ben ; Grasser, Tibor On the Importance of Electron-electron Scattering for Hot-carrier DegradationKonferenzbeitrag Inproceedings 2014
17Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
18Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
19Rupp, Karl ; Bina, Markus ; Wimmer, Yannick ; Jungel, Ansgar ; Grasser, Tibor Cell-centered finite volume schemes for semiconductor device simulationKonferenzbeitrag Inproceedings2014
20Bina Markus - 2014 - Charge transport models for reliability engineering of...pdf.jpgBina, Markus Charge transport models for reliability engineering of semiconductor devicesThesis Hochschulschrift 2014

Contributing Publications Mitbeteiligte Publikationen

Results 1-1 of 1 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Schwarz Benedikt - 2011 - Simulation of random dopant fluctuations with a...pdf.jpgSchwarz, BenediktSimulation of random dopant fluctuations with a quantum-corrected drift-diffusion modelThesis Hochschulschrift 2011