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Enichlmair, H.
 

Own Publications Eigene Publikationen

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PreviewAuthor(s)TitleTypeIssue Date
1Michl, Jakob ; Grill, Alexander ; Waldhör, Dominic ; Schleich, Christian ; Knobloch, Theresia ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, Ben ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, I ; Grasser, Tibor ; Waltl, Michael Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSKonferenzbeitrag Inproceedings 2021
2Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021
3Michl, J. ; Grill, Alexander ; Stampfer, B. ; Waldhoer, D. ; Schleich, Christian ; Knobloch, T. ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, B. ; Parvais, B. ; Govoreanu, Bogdan ; Radu, I. ; Grasser, T. ; Waltl, M. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSInproceedings Konferenzbeitrag2021
4Tselios, K. ; Stampfer, B. ; Michl, J. ; Ioannidis, E. ; Enichlmair, H. ; Waltl, M. Distribution of Step Heights of Electron and Hole Traps in SiON nMOS TransistorsKonferenzbeitrag Inproceedings 2020
5Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, H. ; Park, J.M. ; Ceric, Hajdin ; Grasser, Tibor Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsKonferenzbeitrag Inproceedings2015
6Sharma, P. ; Tyaginov, S. ; Wimmer, Y. ; Rudolf, F. ; Rupp, K. ; Enichlmair, H. ; Park, J.-M. ; Ceric, H. ; Grasser, T. Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETsArtikel Article 2015
7Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport EquationArtikel Article 2015
8Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T. Physical modeling of hot-carrier degradation in nLDMOS transistorsKonferenzbeitrag Inproceedings2014
9Tyaginov, S. ; Bina, M. ; Franco, J. ; Wimmer, Y. ; Rudolf, F. ; Enichlmair, H. ; Park, J.M. ; Kaczer, B. ; Ceric, H. ; Grasser, T. Dominant mechanisms of hot-carrier degradation in short- and long-channel transistorsKonferenzbeitrag Inproceedings2014
10Tyaginov, S. E. ; Osintsev, Dimitry ; Illarionov, Yury ; Park, J.M. ; Enichlmair, H. ; Vexler, M. I. ; Grasser, Tibor Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configurationKonferenzbeitrag Inproceedings2013
11Tyaginov, S. E. ; Starkov, I. A. ; Triebl, O. ; Karner, M. ; Kernstock, Ch. ; Jungemann, C. ; Enichlmair, H. ; Park, J.M. ; Grasser, T. Impact of gate oxide thickness variations on hot-carrier degradationKonferenzbeitrag Inproceedings2012
12Starkov, I. ; Enichlmair, H. ; Tyaginov, S. ; Grasser, T. Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETsKonferenzbeitrag Inproceedings2012
13Starkov, Ivan ; Enichlmair, H. ; Grasser, Tibor Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFETKonferenzbeitrag Inproceedings2012
14Starkov, Ivan ; Enichlmair, H. ; Tyaginov, S. E. ; Grasser, Tibor Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier StressKonferenzbeitrag Inproceedings2012
15Tyaginov, S. ; Starkov, I. ; Enichlmair, H. ; Jungemann, Ch. ; Park, J.M. ; Seebacher, E. ; Orio, R. ; Ceric, H. ; Grasser, T. An Analytical Approach for Physical Modeling of Hot-Carrier Induced DegradationArtikel Article2011
16Starkov, I. ; Tyaginov, S. ; Enichlmair, H. ; Cervenka, J. ; Jungemann, C. ; Carniello, S. ; Park, J. M. ; Ceric, H. ; Grasser, T. Hot-Carrier Degradation Caused Interface State Profile-Simulation versus ExperimentArtikel Article2011
17Tyaginov, S. E. ; Starkov, Ivan ; Jungemann, C. ; Enichlmair, H. ; Park, Jong Mun ; Grasser, Tibor Impact of the Carrier Distribution Function on Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2011
18Starkov, Ivan ; Starkov, A. S. ; Tyaginov, S. E. ; Enichlmair, H. ; Ceric, Hajdin ; Grasser, Tibor An Analytical Model for MOSFET Local Oxide CapacitanceKonferenzbeitrag Inproceedings2011
19Tyaginov, S. E. ; Starkov, Ivan ; Enichlmair, H. ; Park, J.M. ; Jungemann, C. ; Grasser, Tibor Physics-Based Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2011
20Starkov, Ivan ; Tyaginov, S. E. ; Enichlmair, H. ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping MeasurementsKonferenzbeitrag Inproceedings2011