Record link: 
http://hdl.handle.net/20.500.12708/137980
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Title: 
Communication-Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide
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Citation: 
Leitgeb, M., Pfusterschmied, G., Schwarz, S., Depuydt, B., Cho, J., & Schmid, U. (2021). Communication-Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide. ECS Journal of Solid State Science and Technology, 10(7), 073003. https://doi.org/10.1149/2162-8777/ac10b3
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Publisher DOI: 
10.1149/2162-8777/ac10b3
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Leitgeb, Markus 
Pfusterschmied, Georg 
Schwarz, Sabine 
Depuydt, Ben 
Cho, Jinyoun 
Schmid, Ulrich 
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Organisational Unit: 
E366-02 - Forschungsbereich Mikrosystemtechnik 
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie 
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Journal: 
ECS Journal of Solid State Science and Technology 
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ISSN: 
2162-8769
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Date (published): 
2021
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Number of Pages: 
3
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Publisher: 
ELECTROCHEMICAL SOC INC
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Peer reviewed: 
Yes
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Keywords: 
Electronic, Optical and Magnetic Materials
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Abstract: 
Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The period length of the pore diameter variation could be estimated to be about 20 nm. Additionally, it was observed that the assembly of the pores in a top down view is a Turing pattern.
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Research Areas: 
Sensor Systems: 45%
Special and Engineering Materials: 35%
Materials Characterization: 20%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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