Title: Small-signal device and circuit simulation
Language: English
Authors: Wagner, Stephan 
Qualification level: Doctoral
Advisor: Bertagnolli, Emmerich
Assisting Advisor: Grasser, Klaus-Tibor
Issue Date: 2005
Number of Pages: 178
Qualification level: Doctoral
Abstract: 
Die Entwicklung der letzten Jahrzehnte hat gezeigt, dass die numerische Bauelementsimulation einen wichtigen Beitrag zur Charakterisierung von Halbleiterstrukturen leistet. Der wirtschaftliche Vorteil des Einsatzes von modernen Simulationsprogrammen ist enorm, da Resultate von aufwendigen und teuren Experimenten durch numerische Berechnungen vorausgesagt werden können. Um die Voraussetzungen für die Simulation von modernen Halbleiterbauelementen zu erfüllen, müssen die Simulationsprogramme stets erweitert werden, um alle notwendigen physikalischen Effekte berücksichtigen zu können. Neben immer genaueren und aufwendigeren Modellen werden auch neue Simulationsmodi benötigt, um die Menge an berechenbaren Kenngrößen zu erweitern. Im Zuge dieser Arbeit wurden die Anforderungen an eine numerische Kleinsignalanalyse definiert und die zugrundeliegenden Konzepte in den allgemeinen Bauelement- und Schaltungssimulator Minimos-NT implementiert.

During the last decades numerical device simulation has proven to be invaluable for characterizing semiconductor devices. The economic impact is enormous because results of expensive experiments can be predicted by employing one or more simulation tools. To meet the requirements for the simulation of advanced devices, ongoing effort is put into extension of these tools by implementations of state-of-the-art descriptions of all relevant physical effects.
Besides of that modeling the simulators have also to be extended by new simulation modes. In course of this work, the requirements for small-signal simulations have been identified and new features have been added to the general-purpose device and circuit simulator Minimos-NT. After a short introduction including a motivation and overview of the current market situation, the analytical problem of the respective simulations is derived. All features have been used to characterize advanced devices, such as InGaP/GaAs and SiGe HBTs, a wide-bandgap SiC MESFET, and double gate MOSFETs. The latter require higher-order transport models in order to accurately extract the steady-state and small-signal device quantities. Since the small-signal simulation mode is directly based in the frequency domain, the solution of one complex-valued equation system per frequency step is required. For that reason, the numerical core modules have been extended to handle both real-valued and complex-valued quantities.
In order to profit from new developments of mathematical code, the solver module has been extended by an interface to external solvers.
URI: https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-21302
http://hdl.handle.net/20.500.12708/13881
Library ID: AC04583162
Organisation: E360 - Institut für Mikroelektronik 
Publication Type: Thesis
Hochschulschrift
Appears in Collections:Thesis

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