Record link: 
http://hdl.handle.net/20.500.12708/142846
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Title: 
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics
en
Citation: 
Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., & Weinbub, J. (2019). Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics. IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929
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Publisher DOI: 
10.1109/ted.2019.2916929
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Toifl, Alexander 
Simonka, Vito 
Hössinger, Andreas 
Selberherr, Siegfried 
Grasser, Tibor 
Weinbub, Josef 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
IEEE Transactions on Electron Devices 
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ISSN: 
0018-9383
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Date (published): 
Jul-2019
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Number of Pages: 
6
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Nanotechnologie
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