Record link: 
http://hdl.handle.net/20.500.12708/152444
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Title: 
Epitaxial growth of crystalline CaF2 on silicene by molecular beam epitaxy
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Citation: 
Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., & Lugstein, A. (2022, September 12). Epitaxial growth of crystalline CaF2 on silicene by molecular beam epitaxy [Conference Presentation]. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria.
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Publication Type: 
Presentation - Conference Presentation
en
 
Vortrag - Conference Presentation
de
Language: 
English
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Authors: 
Nazzari, Daniele 
Genser, Jakob Alexander 
Ritter, Viktoria 
Bethge, Ole 
Bertagnolli, Emmerich 
Grasser, Tibor 
Weber, Walter Michael 
Lugstein, Alois 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E362-01 - Forschungsbereich Optoelektronische Materialien 
E360-01 - Forschungsbereich Mikroelektronik 
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Date (published): 
12-Sep-2022
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Event name: 
19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19) 
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Event date: 
10-Sep-2022 - 16-Sep-2022
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Event place: 
Mondsee, Austria
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Keywords: 
epitaxial; growth; silicene; molecular beam epitaxy
en
Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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