The Importance of Secondary Generated Carriers in Modeling of Full Bias Space

Abstract

Bias temperature instability and hot-carrier degradation are undoubtedly the most studied degradation phenomena in modern electronic devices. Studies, however, typically focus on the idealized individual degradation mode and neglect their interplay in full bias space. Here, we propose an extended modeling framework based on a thorough description of the transport dynamics to describe the charging kinetics of oxide defects due to a heated carrier ensemble. We validate our framework using both, the behavior of single oxide traps and large-area devices across full bias space.