Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitors

Bethge, O.; Abermann, S.; Henkel, C.; Smoliner, J.; Bertagnolli, E.; Straif, C. J.; Hutter, H.

doi:10.1116/1.3521472

Notice
This item was automatically migrated from a legacy system. It's data has not been checked and might not meet the quality criteria of the present system.

Record link:

http://hdl.handle.net/20.500.12708/162721

Title:

Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitors

Citation:

Bethge, O., Abermann, S., Henkel, C., Smoliner, J., Bertagnolli, E., Straif, C. J., & Hutter, H. (2011). Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitors. Journal of Vacuum Science & Technology B, 29(1), 01A806. https://doi.org/10.1116/1.3521472

Publisher DOI:

10.1116/1.3521472

Publication Type:

Article - Original Research Article

Authors:

Bethge, O.
Abermann, S.
Henkel, C.
Smoliner, J.
Bertagnolli, E.
Straif, C. J.
Hutter, H.

Organisational Unit:

E362 - Institut für Festkörperelektronik

Journal:

Journal of Vacuum Science & Technology B

ISSN:

2166-2746

Date (published):

2011

Number of Pages:

Peer reviewed:

Yes

Keywords:

Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Instrumentation; Process Chemistry and Technology; Surfaces, Coatings and Films; Materials Chemistry

Research Areas:

Materials Characterization: 10%
Surfaces and Interfaces: 70%
Nanoelectronics: 20%

Science Branch:

Elektrotechnik, Elektronik

Appears in Collections:

Article

Show full item record