JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Title Titel
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 
e-ISSN
2166-2754
 
ISSN
2166-2746
 
Publisher Herausgeber
A V S AMER INST PHYSICS
 
Publisher's Address Herausgeber Adresse
STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, USA, NY, 11747-4502
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 1-20 of 34 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Bethge, O. ; Abermann, S. ; Henkel, C. ; Smoliner, J. ; Bertagnolli, E. ; Straif, C. J. ; Hutter, H. Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitorsArtikel Article 2011
2Roediger, Peter ; Wanzenboeck, Heinz D. ; Hochleitner, Gottfried ; Bertagnolli, Emmerich Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etchingArtikel Article 2011
3Giubertoni, D. ; Pepponi, Giancarlo ; Sahiner, M.A. ; Kelty, S.P. ; Gennaro, S. ; Bersani, M. ; Kah, M. ; Kirkby, K.J. ; Doherty, R. ; Foad, M.A. ; Meirer, F. ; Streli, Christina ; Woicik, J.C. ; Pianetta, P. Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentArtikel Article 2010
4Čičo, K. ; Hušeková, K. ; Ťapajna, M. ; Gregušová, D. ; Stoklas, R. ; Kuzmík, J. ; Carlin, J.-F. ; Grandjean, N. ; Pogany, D. ; Fröhlich, K. Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectricsArtikel Article2011
5Hochleitner, Gottfried ; Wanzenböck, Heinz D. ; Bertagnolli, Emmerich Electron beam induced deposition of iron nanostructuresArtikel Article 2008
6Rödiger, Peter ; Wanzenböck, Heinz D. ; Hochleitner, Gottfried ; Bertagnolli, Emmerich Evaluation of chamber contamination in a scanning electron microscopeArtikel Article 2009
7Triendl, Fabian ; Fleckl, Gernot ; Schneider, Michael ; Pfusterschmied, Georg ; Schmid, Ulrich Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature rangeArtikel Article 2019
8Schitter, Georg ; Stemmer, A. Fast closed loop control of piezoelectric transducersArtikel Article2002
9Waid, Simon ; Wanzenboeck, Heinz D. ; Muehlberger, Michael ; Gavagnin, Marco ; Bertagnolli, Emmerich Focused ion beam direct patterning of hardmask layersArtikel Article 2014
10Waid, Simon ; Wanzenboeck, Heinz D. ; Gavagnin, Marco ; Langegger, Ruppert ; Muehlberger, Michael ; Bertagnolli, Emmerich Focused ion beam induced Ga-contamination-An obstacle for UV-nanoimprint stamp repair?Artikel Article 2013
11Pepponi, Giancarlo ; Giubertoni, D. ; Bersani, M. ; Meirer, F. ; Ingerle, D. ; Steinhauser, Georg ; Streli, Christina ; Hoenicke, P. ; Beckhoff, B. Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in siliconArtikel Article2010
12Langegger, Rupert ; Lugstein, Alois ; Glaser, Markus ; Bertagnolli, Emmerich ; Steiger-Thirsfeld, Andreas High temperature focused ion beam response of graphite resulting in spontaneous nanosheet formationArtikel Article2011
13Starkov, I. ; Tyaginov, S. ; Enichlmair, H. ; Cervenka, J. ; Jungemann, C. ; Carniello, S. ; Park, J. M. ; Ceric, H. ; Grasser, T. Hot-Carrier Degradation Caused Interface State Profile-Simulation versus ExperimentArtikel Article2011
14Lutzer, Bernhard ; Bethge, Ole ; Zimmermann, Christina ; Smoliner, Jürgen ; Bertagnolli, Emmerich In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperatureArtikel Article 2017
15Cico, Karol ; Kuzmik, Jan ; Liday, J. ; Husekova, K ; Pozzovivo, Gianmauro ; Carlin, Jean-François ; Grandjean, Nicolas ; Pogany, Dionyz ; Vogrincic, P ; Fröhlich, Karol InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al₂O₃ insulating films grown by metal organic chemical vapor deposition using Ar and NH₃ carrier gasesArtikel Article2009
16Detz, Hermann ; Silvano de Sousa, Jonathan ; Leonhardt, Horst ; Klang, Pavel ; Zederbauer, Tobias ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Smoliner, Jürgen ; Strasser, Gottfried InGaAs/GaAsSb based two-dimensional electron gasesArtikel Article2014
17Detz, Hermann ; Andrews, Aaron Maxwell ; Nobile, Michele ; Klang, Pavel ; Mujagic, Elvis ; Hesser, G ; Schrenk, Werner ; Schäffler, F. ; Strasser, Gottfried Intersubband optoelectronics in the InGaAs/GaAsSb material systemArtikel Article2010
18Kaczer, Ben ; Veloso, A. ; Roussel, Ph. J. ; Grasser, Tibor ; Groeseneken, G. Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate StacksArtikel Article2009
19Ebm, C ; Platzgummer, E ; Löschner, Hans ; Eder-Kapl, Stefan ; Jöchl, Peter ; Kümmel, Marco ; Reitinger, Rüdiger ; Hobler, Gerhard ; Köck, Anton ; Hainberger, R. ; Wellenzohn, Markus ; Letzkus, F ; Irmscher, Mathias Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and depositionArtikel Article 2009
20Detz, Hermann ; Kriz, Martin ; Lancaster, Suzanne ; MacFarland, Donald ; Schinnerl, Markus ; Zederbauer, Tobias ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Strasser, Gottfried Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of GaArtikel Article 2017