Record link: 
http://hdl.handle.net/20.500.12708/167242
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Title: 
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
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Citation: 
Giubertoni, D., Pepponi, G., Sahiner, M. A., Kelty, S. P., Gennaro, S., Bersani, M., Kah, M., Kirkby, K. J., Doherty, R., Foad, M. A., Meirer, F., Streli, C., Woicik, J. C., & Pianetta, P. (2010). Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment. Journal of Vacuum Science and Technology B, 28(1), C1B1-C1B5. https://doi.org/10.1116/1.3242637
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Publisher DOI: 
10.1116/1.3242637
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Giubertoni, D. 
Pepponi, Giancarlo 
Sahiner, M.A. 
Kelty, S.P. 
Gennaro, S. 
Bersani, M. 
Kah, M. 
Kirkby, K.J. 
Doherty, R. 
Foad, M.A. 
Meirer, F. 
Streli, Christina 
Woicik, J.C. 
Pianetta, P. 
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Organisational Unit: 
E141-05 - Forschungsbereich Radiation Physics 
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Journal: 
Journal of Vacuum Science and Technology B 
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ISSN: 
2166-2746
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Date (published): 
2010
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Number of Pages: 
5
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Publisher: 
A V S AMER INST PHYSICS
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Instrumentation; Process Chemistry and Technology; Surfaces, Coatings and Films; Materials Chemistry
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Abstract: 
300-900 °C in a N₂ atmosphere for 10 min. Electrical deactivation has been observed for all the
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Research Areas: 
Materials Characterization: 100%
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Science Branch: 
Physik, Mechanik, Astronomie
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