Record link: 
http://hdl.handle.net/20.500.12708/163434
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Title: 
Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation
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Citation: 
Schweiger, K., Hofbauer, M., Dietrich, H., Zimmermann, H., Voss, K. O., & Merk, B. (2012). Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation. Electronics Letters, 48(3), 171–172. https://doi.org/10.1049/el.2011.3767
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Publisher DOI: 
10.1049/el.2011.3767
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Schweiger, Kurt 
Hofbauer, Michael 
Dietrich, Horst 
Zimmermann, Horst 
Voss, K.O. 
Merk, B. 
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Organisational Unit: 
E354-02 - Forschungsbereich Integrated Circuits 
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Journal: 
Electronics Letters 
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ISSN: 
0013-5194
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Date (published): 
2-Feb-2012
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Number of Pages: 
2
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Publisher: 
WILEY
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; heavy ion irradiation; single event transient voltage pulse shapes
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Abstract: 
A CMOS inverter in 90 nm CMOS bulk technology was exposed to heavy ion radiation (Au-197) at a micro-beam facility. The targeted inverter occupies an area of 6×3 µm². The resulting single event transient (SET) voltage pulses at the output were measured using an on-chip analogue sense amplifier. The output of the amplifier was recorded with a 15 GHz real-time oscilloscope. Depending on the location of the ion hits strongly different pulse shapes were observed.
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Research Areas: 
Risk based Design: 30%
Nanoelectronics: 30%
Computer Engineering and Software-Intensive Systems: 40%
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Science Branch: 
Elektrotechnik, Elektronik
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