Record link: 
http://hdl.handle.net/20.500.12708/166063
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Title: 
Impact of Germanium Surface Conditioning and ALD-growth Temperature on Al₂O₃/ZrO₂ High-k Dielectric Stacks
en
Citation: 
Bethge, O., Abermann, S., Henkel, C., Straif, C. J., Hutter, H., & Bertagnolli, E. (2009). Impact of Germanium Surface Conditioning and ALD-growth Temperature on Al₂O₃/ZrO₂ High-k Dielectric Stacks. Journal of The Electrochemical Society, 156(10), G168. https://doi.org/10.1149/1.3205455
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Publisher DOI: 
10.1149/1.3205455
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Bethge, Ole 
Abermann, Stephan 
Henkel, Christoph 
Straif, Christoph Josef 
Hutter, Herbert 
Bertagnolli, Emmerich 
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Organisational Unit: 
E164-01-2 - Forschungsgruppe Oberflächen-, Spurenanalytik und Chemometrie 
E362 - Institut für Festkörperelektronik 
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Journal: 
Journal of The Electrochemical Society 
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ISSN: 
0013-4651
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Date (published): 
2009
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Number of Pages: 
5
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Publisher: 
ELECTROCHEMICAL SOC INC
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Peer reviewed: 
Yes
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Keywords: 
Condensed Matter Physics; Electronic, Optical and Magnetic Materials; Renewable Energy, Sustainability and the Environment; Surfaces, Coatings and Films; Materials Chemistry; Electrochemistry
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Research Areas: 
Structure-Property Relationship: 10%
Special and Engineering Materials: 30%
Materials Characterization: 20%
Surfaces and Interfaces: 10%
Nanoelectronics: 30%
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Science Branch: 
Elektrotechnik, Elektronik
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