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Record link:
http://hdl.handle.net/20.500.12708/167845
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Title:
Ge p-MOSFETs With Scaled ALD π»πβπΎβ/πππΎβ Gate Dielectrics
en
Citation:
Henkel, C., Abermann, S., Bethge, O., Pozzovivo, G., Klang, P., Reiche, M., & Bertagnolli, E. (2010). Ge p-MOSFETs With Scaled ALD π»πβπΎβ/πππΎβ Gate Dielectrics.
IEEE Transactions on Electron Devices
,
57
(12), 3295β3302. https://doi.org/10.1109/ted.2010.2081366
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Publisher DOI:
10.1109/ted.2010.2081366
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Publication Type:
Artikel - Original Research Article
de
Article - Original Research Article
en
Language:
English
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Authors:
Henkel, C.
Abermann, S.
Bethge, O.
Pozzovivo, G.
Klang, P.
Reiche, M.
Bertagnolli, E.
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Organisational Unit:
E362 - Institut fΓΌr FestkΓΆrperelektronik
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Journal:
IEEE Transactions on Electron Devices
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ISSN:
0018-9383
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Date (published):
Dec-2010
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Number of Pages:
8
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Publisher:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed:
Yes
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Keywords:
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Research Areas:
Surfaces and Interfaces: 50%
Materials Characterization: 50%
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Science Branch:
Elektrotechnik, Elektronik
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Appears in Collections:
Article
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