Roemer, C., Darbandy, G., Schwarz, M., Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M., Iniguez, B., & Kloes, A. (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. IEEE Journal of the Electron Devices Society, 10, 416–423. https://doi.org/10.1109/JEDS.2021.3136981
closed-form; compact modeling; field emission; RFET; SBFET; Schottky barrier; thermionic emission; tunneling current
en
Abstract:
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
en
Research Areas:
Logic and Computation: 80% Computational Materials Science: 20%