Record link: 
http://hdl.handle.net/20.500.12708/193157
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Title: 
Intrinsic Charge Trapping Sites in Amorphous Si₃N₄
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Citation: 
Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France.
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Wilhelmer, Christoph 
Milardovich, Diego 
Waldhör, Dominic 
Cvitkovich, Lukas 
Waltl, Michael 
Grasser, Tibor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Date (published): 
30-May-2023
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Event name: 
European Materials Research Society (E-MRS) Spring Meeting 2023 
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Event date: 
29-May-2023 - 2-Jun-2023
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Event place: 
Strasbourg, France
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Keywords: 
Silicon nitride; Intrinsic charge trapping; Nonradiative mutli-phonon model; Machine-learned interatomic potential
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Project title: 
Modeling Unconventional Nanoscaled Device FABrication: 871813 (European Commission) 
CD-Labor für Einzeldefektspektroskopie in Halbleiterbauelementen: 1577886 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 40%
Computational Materials Science: 60%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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