Interlayer exchange coupling for enhanced performance in spin-transfer torque MRAM devices

Abstract

We present a micromagnetic modeling study that explores the impact of interface exchange coupling in multilayered spintronic devices, such as the spin-transfer torque magnetoresistive random access memory, which is at the forefront of nonvolatile storage. By examining the exchange interactions facilitated by non-magnetic or insulating layers between ferromagnetic ones, we explore the critical role of interlayer exchange coupling in the magnetic stability and domain dynamics essential for the efficiency of spin-transfer torque mechanisms. This understanding is crucial for enhancing device performance, particularly in terms of data reliability and access speeds, amid the ongoing miniaturization trend in nanotechnology. The magnetic tunnel junction within spin-transfer torque magnetoresistive random access memory, featuring a CoFeB-based layered structure, enables significant data density improvements through reduced cell sizes and enhanced magnetic properties. However, miniaturization also raises concerns about the reliability and stability of these devices, particularly due to phenomena like back-hopping. Our research addresses these concerns by highlighting the role of IEC in achieving magnetic alignment and optimizing overall device performance, thereby meeting the rigorous requirements of modern memory applications and paving the way for the next generation of memory technologies.