Hadámek, T., & Sverdlov, V. (2026). Temperature modeling and pulse shaping strategies for energy optimization in 2T-SOT-MRAM. Solid-State Electronics, 232, Article 109284. https://doi.org/10.1016/j.sse.2025.109284
Hot-electron heating; Pulse-shaping strategies; Reduced energy consumption; Temperature; Two-terminal SOT-MRAM
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Abstract:
A fully 3D model coupling spin, charge, magnetization, and temperature dynamics has been employed to study the two-terminal spin–orbit-torque magnetoresistive random-access memory (2T-SOT-MRAM). To account for heating from tunneling electrons, we applied an asymmetric heating model near the tunnel barrier, revealing that symmetric model can underestimate free layer temperature increase by over 25%. We further employ the model to simulate switching of the 2T-SOT-MRAM under different voltage pulse shapes and show that the pulse-shaping strategies can not only reduce power consumption by more than 30%, but also significantly reduce peak temperature of the device during writing.
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Project title:
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells)
