Record link: 
http://hdl.handle.net/20.500.12708/230915
https://doi.org/10.34726/12691
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Title: 
Excess leakage current and random telegraph noise due to localized defects in p-n and p-i-n diodes on GaN-on-Si substrate
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Citation: 
Roy Chaudhuri, R., Rockermeier, H., Stabentheiner, M., Provias, A., Stampfer, B., Waltl, M., Ostermaier, C., & Pogany, D. (2026). Excess leakage current and random telegraph noise due to localized defects in p-n and p-i-n diodes on GaN-on-Si substrate. In GaN Marathon 2026 : Camera di Commercio, Florence, June 7-10, 2026 : Book of Abstracts (pp. 159–160). https://doi.org/10.34726/12691
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reposiTUm DOI: 
10.34726/12691
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CatalogPlus: 
AC18023773
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Roy Chaudhuri, Rajarshi 
Rockermeier, Hubert 
Stabentheiner, Manuel 
Provias, Alexandros 
Stampfer, Bernhard 
Waltl, Michael 
Ostermaier, Clemens 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
GaN Marathon 2026 : Camera di Commercio, Florence, June 7-10, 2026 : Book of Abstracts 
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ISBN: 
978-88-5495-966-8
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Date (published): 
2026
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Event name: 
GaN Marathon 2026 
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Event date: 
7-Jun-2026 - 10-Jun-2026
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Event place: 
Florenz, Italy
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Number of Pages: 
2
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Keywords: 
Random telegraph noise; Gallium nitride (GaN) diodes; Excess leakage current; Extended defects
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Project title: 
Affordable smart GaN IC solutions for greener applications: 101111890 (European Commission; FFG - Österr. Forschungsförderungs- gesellschaft mbH) 
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Research Areas: 
Materials Characterization: 30%
Nanoelectronics: 70%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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License: 
CC BY-NC-ND 4.0 CC BY-NC-ND 4.0
en
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