reposiTUm: Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon

Record link:

http://hdl.handle.net/20.500.12708/231018

Title:

Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon

Citation:

Hiller, D., Nagarajan, S., Ratschinski, I., Shah, S., Shams, S., Fuchsberger, A., Sistani, M., Schmult, S., Wirth, S., Prado-Navarrete, E., Aberl, J., Brehm, M., Weber, W. M., Mikolajick, T., Trommer, J., & König, D. (2026, May 21). Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon [Poster Presentation]. 12th joint EUROSOI Workshop and international conference on ultimate integration on silicon (EUROSOI-ULIS 2026), Granada, Spain.

Publication Type:

Presentation - Poster Presentation

Language:

English

Organisational Unit:

E362-02 - Forschungsbereich Nanoelektronische Bauelemente
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials
E056-29 - Fachbereich BioDevX

Date (published):

21-May-2026

Event name:

12th joint EUROSOI Workshop and international conference on ultimate integration on silicon (EUROSOI-ULIS 2026)

Event date:

20-May-2026 - 22-May-2026

Event place:

Granada, Spain

Keywords:

Nanoelectronics; Modulation Acceptor Doping; cryo-electronics

Research Areas:

Surfaces and Interfaces: 50%
Nanoelectronics: 50%

Science Branch:

2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%

Appears in Collections:

Presentation

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