Title: Metal assisted photochemical etching of 4H silicon carbide
Language: English
Authors: Leitgeb, Markus 
Zellner, Christopher 
Schneider, Michael 
Schwab, Stefan 
Hutter, Herbert
Schmid, Ulrich
Category: Research Article
Keywords: metal assisted etching; silicon carbide; micromachining; porous silicon carbide
Issue Date: 2017
Journal: Journal of Physics D: Applied Physics
Metal assisted photochemical etching (MAPCE) of 4H–silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process of the resulting porous layer is studied with respect to etching time, concentration and type of oxidizing agent. From the experiments it is concluded that the porous layer formation is due to electron hole pairs generated in the semiconductor, which stem from UV light irradiation. The generated holes are consumed during the oxidation of 4H–SiC and the formed oxide is dissolved by HF. To maintain charge balance, the oxidizing agent has to take up electrons at the Pt/etching solution interface.

Total dissolution of the porous layers is achieved when the oxidizing agent concentration decreases during MAPCE. In combination with standard photolithography, the definition of porous regions is possible. Furthermore chemical micromachining of 4 H–SiC at room temperature is possible.
DOI: 10.1088/1361-6463/aa8942
Library ID: AC15576024
URN: urn:nbn:at:at-ubtuw:3-8543
ISSN: 1361-6463
Organisation: E366 - Institut für Sensor- und Aktuatorsysteme 
Publication Type: Article
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