Title: Stacked Layers of Different Porosity in 4H SiC Substrates Applying a Photoelectrochemical Approach
Language: English
Authors: Leitgeb, Markus R. 
Zellner, Christopher 
Hufnagl, Christoph 
Schneider, Michael  
Schwab, Stefan
Hutter, Herbert 
Schmid, Ulrich
Category: Original Research Article
Issue Date: 2017
Journal: Journal of the Electrochemical Society
ISSN: 1945-7111
Porous 4H-SiC layers were prepared from monocrystalline samples applying photo-electrochemical etching in hydrofluoric acid. The influence of both current and voltage controlled mode during photo-electrochemical porosification was investigated. It was found that the resulting degree of porosity, the homogeneity in porosity as well as the pore morphology mainly depend on the applied voltage, whereas the current level has an almost negligible impact on these important parameters. Based on these results, it is proposed that the formation of porous SiC during photo-electrochemical etching can be described by fractal growth. Finally the gathered knowledge allowed to detach the porous 4H-SiC layers, which comprised several sub-layers of alternating degree of porosity, from the 4H-SiC substrate. Such layers of tailored porosity are key components for several advanced device concepts such as optical filters or membranes for biological applications.
Keywords: Microfabrication; Optical Filters; Photoelectrochemical Etching; Porous Semiconductors; Silicon Carbide
DOI: 10.1149/2.1081712jes
Library ID: AC15558273
URN: urn:nbn:at:at-ubtuw:3-8277
Organisation: E366 - Institut für Sensor- und Aktuatorsysteme 
Publication Type: Article
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