International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
24-09-2025
End date
26-09-2025
 
Location
Grenoble
Country
France
 
Conference Track
Multi Track
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-17 of 17 (Search time: 0.005 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Sheikholeslami, A. ; Parhami, F. ; Heinzl, R. ; Al-Ani, E. ; Heitzinger, C. ; Badrieh, F. ; Puchner, H. ; Grasser, T. ; Selberherr, S. Applications of Three-Dimensional Topography Simulation in the Design of Interconnect LinesKonferenzbeitrag Inproceedings2005
2Fu, Yihao ; Shao, Hua ; Xia, Longrui ; Ge, Rui ; Bai, Lang ; He, Xiaobin ; Junjie Li ; Chen, Rui ; Wei, Yayi ; Li, Ling ; Filipovic, Lado Atomic-Level Monte Carlo Modeling of SiN Deposition by PECVDInproceedings Konferenzbeitrag 2025
3Bamer, Balazs ; Leroch, Sabine ; Hossinger, Andreas ; Filipovic, Lado Cluster-Based Semi-Empirical Model for Dopant Activation in Silicon CarbideInproceedings Konferenzbeitrag 2024
4Schwaha, Philipp ; Heinzl, Rene ; Spevak, Michael ; Grasser, Tibor Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error EstimatorKonferenzbeitrag Inproceedings2005
5Yuki, Ohuchi ; Stella, Robert ; Filipovic, Lado Development of a Gaussian Approximation Potential for Gan With Point Defects and Mg ImpuritiesInproceedings Konferenzbeitrag 2025
6Wessner, W. ; Ceric, H. ; Cervenka, J. ; Selberherr, S. Dynamic Mesh Adaptation for Three-Dimensional Electromigration SimulationKonferenzbeitrag Inproceedings2005
7Ungersboeck, E. ; Kosina, H. The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion LayersKonferenzbeitrag Inproceedings2005
8Karner, M. ; Gehring, A. ; Kosina, H. ; Selberherr, S. Efficient Calculation of Quasi-Bound State Tunneling in CMOS DevicesKonferenzbeitrag Inproceedings2005
9Heinzl, R. ; Grasser, T. Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCADKonferenzbeitrag Inproceedings2005
10Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect TransistorsKonferenzbeitrag Inproceedings2005
11Entner, Robert ; Gehring, Andreas ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried Modeling of Tunneling Currents for Highly Degraded CMOS DevicesKonferenzbeitrag Inproceedings2005
12Wittmann, Robert ; Hössinger, Andreas ; Selberherr, Siegfried Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETsKonferenzbeitrag Inproceedings2005
13Dhar, S. ; Karlowatz, G. ; Ungersboeck, E. ; Kosina, H. Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained SiliconKonferenzbeitrag Inproceedings2005
14Stella, Robert ; Leroch, Sabine ; Reiter, Tobias ; Hössinger, Andreas ; Filipovic, Lado Physics-Based Multi-Scale Modeling of Angled Reactive Ion EtchingInproceedings Konferenzbeitrag 28-Oct-2025
15Hu, Ziyi ; Junjie Li ; Shao, Hua ; Chen, Rui ; Filipovic, Lado ; Li, Ling Physics-Informed Bayesian Optimization Framework for Etching Rate and Surface Roughness Co-OptimizationInproceedings Konferenzbeitrag 28-Oct-2025
16Pruckner, Bernhard ; Jørstad, Nils Petter ; Bendra, Mario ; Hadamek, Tomas ; Wolfgang Goes ; Selberherr, Siegfried ; Sverdlov, Viktor Simulation of Advanced MRAM Devices for sub-ns SwitchingInproceedings KonferenzbeitragOct-2024
17Hollauer, Ch. ; Ceric, H. ; Selberherr, S. Three-Dimensional Simulation of Stress Dependent Thermal OxidationKonferenzbeitrag Inproceedings2005