2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Event name
2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
01-09-2005
End date
03-09-2005
 
Location
Tokyo
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-11 of 11 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Sheikholeslami, A. ; Parhami, F. ; Heinzl, R. ; Al-Ani, E. ; Heitzinger, C. ; Badrieh, F. ; Puchner, H. ; Grasser, T. ; Selberherr, S. Applications of Three-Dimensional Topography Simulation in the Design of Interconnect LinesKonferenzbeitrag Inproceedings2005
2Schwaha, Philipp ; Heinzl, Rene ; Spevak, Michael ; Grasser, Tibor Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error EstimatorKonferenzbeitrag Inproceedings2005
3Wessner, W. ; Ceric, H. ; Cervenka, J. ; Selberherr, S. Dynamic Mesh Adaptation for Three-Dimensional Electromigration SimulationKonferenzbeitrag Inproceedings2005
4Ungersboeck, E. ; Kosina, H. The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion LayersKonferenzbeitrag Inproceedings2005
5Karner, M. ; Gehring, A. ; Kosina, H. ; Selberherr, S. Efficient Calculation of Quasi-Bound State Tunneling in CMOS DevicesKonferenzbeitrag Inproceedings2005
6Heinzl, R. ; Grasser, T. Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCADKonferenzbeitrag Inproceedings2005
7Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect TransistorsKonferenzbeitrag Inproceedings2005
8Entner, Robert ; Gehring, Andreas ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried Modeling of Tunneling Currents for Highly Degraded CMOS DevicesKonferenzbeitrag Inproceedings2005
9Wittmann, Robert ; H√∂ssinger, Andreas ; Selberherr, Siegfried Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETsKonferenzbeitrag Inproceedings2005
10Dhar, S. ; Karlowatz, G. ; Ungersboeck, E. ; Kosina, H. Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained SiliconKonferenzbeitrag Inproceedings2005
11Hollauer, Ch. ; Ceric, H. ; Selberherr, S. Three-Dimensional Simulation of Stress Dependent Thermal OxidationKonferenzbeitrag Inproceedings2005