International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
01-09-2005
End date
03-09-2005
 
Location
Tokyo
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-20 of 159 (Search time: 0.004 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivityKonferenzbeitrag Inproceedings2014
2Wang, L. ; Brown, A. R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, B. ; Millar, C. ; Asenov, A. 3D electro-thermal simulations of bulk FinFETs with statistical variationsKonferenzbeitrag Inproceedings2015
3de Orio, R. L. ; Ceric, H. ; Selberherr, S. A compact model for early electromigration lifetime estimationKonferenzbeitrag Inproceedings2011
4Wimmer, Y. ; Goes, W. ; El-Sayed, A.-M. ; Shluger, A.L. ; Grasser, T. A density-functional study of defect volatility in amorphous silicon dioxideKonferenzbeitrag Inproceedings2015
5Schanovsky, F. ; Baumgartner, O. ; Goes, W. ; Grasser, T. A detailed evaluation of model defects as candidates for the bias temperature instabilityKonferenzbeitrag Inproceedings2013
6Ertl, Otmar ; Selberherr, Siegfried A Fast Void Detection Algorithm for Three-Dimensional Deposition SimulationKonferenzbeitrag Inproceedings2009
7Weinbub, Josef ; Rupp, Karl ; Selberherr, Siegfried A Flexible Execution Framework for High-Performance TCAD ApplicationsKonferenzbeitrag Inproceedings2012
8Filipovic, L. ; Selberherr, S. A Level Set simulator for nanooxidation using non-contact atomic force microscopyKonferenzbeitrag Inproceedings2011
9Goes, Wolfgang ; Grasser, Tibor ; Karner, Markus ; Kaczer, Ben A Model for Switching Traps in Amorphous OxidesKonferenzbeitrag Inproceedings2009
10Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
11Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale IntegrationKonferenzbeitrag Inproceedings2012
12Stimpfl, Franz ; Heinzl, Rene ; Schwaha, Philipp A robust parallel delaunay mesh generation approach suitable for three-dimensional TCADKonferenzbeitrag Inproceedings2008
13Stanojevic, Z. ; Karner, M. ; Schnass, K. ; Kernstock, C. ; Baumgartner, O. ; Kosina, H. A versatile finite volume simulator for the analysis of electronic properties of nanostructuresKonferenzbeitrag Inproceedings2011
14Manstetten, Paul ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Accelerated direct flux calculations using an adaptively refined icosahedronKonferenzbeitrag Inproceedings2017
15Rupp, Karl ; Grasser, Tibor ; Jüngel, Ansgar Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport EquationKonferenzbeitrag Inproceedings2011
16Schanovsky, F. ; Goes, W. ; Grasser, T. Advanced modeling of charge trapping at oxide defectsKonferenzbeitrag Inproceedings2013
17Goes, W. ; Waltl, M. ; Wimmer, Y. ; Rzepa, G. ; Grasser, T. Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTIKonferenzbeitrag Inproceedings2014
18Lacerda de Orio, Roberto ; Ceric, Hajdin Analysis of electromigration in redundant viasKonferenzbeitrag Inproceedings2008
19Cervenka, Johann ; Selberherr, Siegfried Analysis of microstructure impact on electromigrationKonferenzbeitrag Inproceedings2008
20Starkov, Ivan ; Ceric, Hajdin ; Tyaginov, Stanislav ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETsKonferenzbeitrag Inproceedings2011