2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Description

Event name
2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
01-09-2005
End date
03-09-2005
 
Location
Tokyo
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-11 of 11 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Sheikholeslami, A. ; Parhami, F. ; Heinzl, R. ; Al-Ani, E. ; Heitzinger, C. ; Badrieh, F. ; Puchner, H. ; Grasser, T. ; Selberherr, S. Applications of Three-Dimensional Topography Simulation in the Design of Interconnect LinesKonferenzbeitrag Inproceedings2005
2Schwaha, Philipp ; Heinzl, Rene ; Spevak, Michael ; Grasser, Tibor Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error EstimatorKonferenzbeitrag Inproceedings2005
3Wessner, W. ; Ceric, H. ; Cervenka, J. ; Selberherr, S. Dynamic Mesh Adaptation for Three-Dimensional Electromigration SimulationKonferenzbeitrag Inproceedings2005
4Ungersboeck, E. ; Kosina, H. The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion LayersKonferenzbeitrag Inproceedings2005
5Karner, M. ; Gehring, A. ; Kosina, H. ; Selberherr, S. Efficient Calculation of Quasi-Bound State Tunneling in CMOS DevicesKonferenzbeitrag Inproceedings2005
6Heinzl, R. ; Grasser, T. Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCADKonferenzbeitrag Inproceedings2005
7Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect TransistorsKonferenzbeitrag Inproceedings2005
8Entner, Robert ; Gehring, Andreas ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried Modeling of Tunneling Currents for Highly Degraded CMOS DevicesKonferenzbeitrag Inproceedings2005
9Wittmann, Robert ; Hössinger, Andreas ; Selberherr, Siegfried Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETsKonferenzbeitrag Inproceedings2005
10Dhar, S. ; Karlowatz, G. ; Ungersboeck, E. ; Kosina, H. Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained SiliconKonferenzbeitrag Inproceedings2005
11Hollauer, Ch. ; Ceric, H. ; Selberherr, S. Three-Dimensional Simulation of Stress Dependent Thermal OxidationKonferenzbeitrag Inproceedings2005