International Reliability Physics Symposium (IRPS)

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International Reliability Physics Symposium (IRPS)
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Event for scientific audience
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Event format Veranstaltungsformat
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Publications Publikationen

Results 1-20 of 59 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Denison, Marie ; Murtaza, Suhail ; Steinhoff, Robert ; Merchant, Steve ; Pendharkar, Sameer ; Bychikhin, Sergey ; Pogany, Dionyz 25V ESD npn transistor optimized by distributed emitter ballasting using emitter contact area segmentationKonferenzbeitrag Inproceedings2007
2Papaleo, S. ; Ceric, H. A finite element method study of delamination at the interface of the TSV interconnectsKonferenzbeitrag Inproceedings2016
3Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
4Waltl, Michael ; Gös, Wolfgang ; Rott, K. ; Reisinger, H. ; Grasser, Tibor A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS CaseKonferenzbeitrag Inproceedings2014
5Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Aichinger, T. ; Hehenberger, Philipp Paul ; Nelhiebel, M. A Two-Stage Model for Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2009
6Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Franco, J. ; Kaczer, Ben A unified perspective of RTN and BTIKonferenzbeitrag Inproceedings2014
7Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect SpectroscopyKonferenzbeitrag Inproceedings2013
8Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang An Energy-Level Perspective of Bias Temperature InstabilityKonferenzbeitrag Inproceedings2008
9Giering, K.-U. ; Rott, G. ; Rzepa, G. ; Reisinger, H. ; Puppala, A.K. ; Reich, T. ; Gustin, W. ; Grasser, T. ; Jancke, R. Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact modelKonferenzbeitrag Inproceedings2016
10Starkov, Ivan ; Enichlmair, H. ; Tyaginov, S. E. ; Grasser, Tibor Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier StressKonferenzbeitrag Inproceedings2012
11Kaczer, Ben ; Mahato, S. ; Valduga de Almeida Camargo, V. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Grasser, Tibor ; Catthoor, F. ; Dobrovolny, P. ; Zuber, P. ; Wirth, G.I. ; Groeseneken, G. Atomistic Approach to Variability of Bias-Temperature Instability in Circuit SimulationsKonferenzbeitrag Inproceedings2011
12Grasser, Tibor Charge Trapping in Oxides From RTN to BTIKonferenzbeitrag Inproceedings2011
13Toledano-Luque, M. ; Kaczer, Ben ; Simoen, E. ; Degraeve, R. ; Franco, J. ; Roussel, Ph. J. ; Grasser, Tibor ; Groeseneken, G. Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETsKonferenzbeitrag Inproceedings2012
14Weckx, P. ; Kaczer, Ben ; Toledano-Luque, M. ; Grasser, Tibor ; Roussel, Ph. J. ; Kukner, H. ; Raghavan, P. ; Catthoor, F. ; Groeseneken, G. Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAMKonferenzbeitrag Inproceedings2013
15Pobegen, G. ; Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor Dependence of the Negative Bias Temperature Instability on the Gate Oxide ThicknessKonferenzbeitrag Inproceedings2010
16Tyaginov, S. E. ; Gös, Wolfgang ; Grasser, Tibor ; Sverdlov, Viktor ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole CrystalKonferenzbeitrag Inproceedings2009
17Pobegen, Gregor ; Nelhiebel, Michael ; Grasser, Tibor Detrimental impact of hydrogen passivation on NBTI and HC degradationKonferenzbeitrag Inproceedings2013
18Hehenberger, Philipp Paul ; Aichinger, T. ; Grasser, Tibor ; Gös, Wolfgang ; Triebl, Oliver ; Kaczer, Ben ; Nelhiebel, M. Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement TechniqueKonferenzbeitrag Inproceedings2009
19Singulani, A. P. ; Ceric, H. ; Langer, E. ; Carniello, S. Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technologyKonferenzbeitrag Inproceedings2013
20Filipovic, L. ; de Orio, R.L. ; Selberherr, S. ; Singulani, A. ; Roger, F. ; Minixhofer, R. Effects of sidewall scallops on open tungsten TSVsKonferenzbeitrag Inproceedings 2014