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| | Preview | Author(s) | Title | Type | Issue Date |
| 21 | | Lagger, Peter Willibald ; Ostermaier, C ; Pogany, Dionyz | Enhancement of Vth Drift for Repetitive Gate Stress Pulses due to Charge Feedback Effect in GaN MIS-HEMTs | Konferenzbeitrag Inproceedings | 2014 |
| 22 | | Aichinger, T. ; Lenahan, P. M. ; Grasser, Tibor ; Pobegen, G. ; Nelhiebel, M. | Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study | Konferenzbeitrag Inproceedings | 2012 |
| 23 | | Grasser, Tibor | Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales | Konferenzbeitrag Inproceedings | 2013 |
| 24 | | Illarionov, Yu. Yu. ; Waltl, M. ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Mueller, T. ; Lemme, M.C. ; Grasser, T. | Hot-carrier degradation in single-layer double-gated graphene field-effect transistors | Konferenzbeitrag Inproceedings | 2015 |
| 25 | | Aichinger, T. ; Puchner, S. ; Nelhiebel, M. ; Grasser, Tibor ; Hutter, H. | Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress | Konferenzbeitrag Inproceedings | 2010 |
| 26 | | Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Roussel, Ph. J. ; Mitard, J. ; Ragnarsson, L. A. ; Witters, L. ; Chiarella, T. ; Togo, M. ; Horiguchi, N. ; Groeseneken, G. ; Bukhori, Muhammad Faiz ; Grasser, Tibor ; Asenov, A | Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs | Konferenzbeitrag Inproceedings | 2012 |
| 27 | | Franco, J. ; Kaczer, Ben ; Cho, M. ; Eneman, G. ; Groeseneken, G. ; Grasser, Tibor | Improvements of NBTI Reliability in SiGe p-FETs | Konferenzbeitrag Inproceedings | 2010 |
| 28 | | Podgaynaya, Alevtina ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias | Investigation and improvement of the electrical Safe Operating Area of DMOS transistor during ESD Events | Konferenzbeitrag Inproceedings | 2009 |
| 29 | | Kaczer, Ben ; Chen, C. ; Weckx, P. ; Roussel, Ph. J. ; Toledano-Luque, M. ; Cho, M. ; Watt, J. T. ; Chanda, K. ; Groeseneken, G. ; Grasser, Tibor | Maximizing reliable performance of advanced CMOS circuits-A case study | Konferenzbeitrag Inproceedings | 2014 |
| 30 | | Waltl, M. ; Grill, A. ; Rzepa, G. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Mitard, J. ; Grasser, T. | Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs | Konferenzbeitrag Inproceedings | 2016 |
| 31 | | Kaczer, Ben ; Grasser, Tibor ; Martin-Martinez, J. ; Simoen, E. ; Aoulaiche, M. ; Roussel, Ph. J. ; Groeseneken, G. | NBTI from the Perspective of Defect States with Widely Distributed Time Scales | Konferenzbeitrag Inproceedings | 2009 |
| 32 | | Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Bury, Erik ; Mertens, Hans ; Ritzenthaler, Romain ; Grasser, Tibor ; Horiguchi, Naoto ; Thean, Aaron ; Groeseneken, Guido | NBTI in Si<inf>0.55</inf>Ge<inf>0.45</inf> cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures | Konferenzbeitrag Inproceedings | 2015 |
| 33 | | Grasser, Tibor | Negative Bias Temperature Instability: Modeling Challenges and Perspectives | Konferenzbeitrag Inproceedings | 2008 |
| 34 | | Grasser, Tibor ; Kaczer, Ben ; Reisinger, H. ; Wagner, Paul-Jürgen ; Toledano-Luque, M. | On the Frequency Dependence of the Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2012 |
| 35 | | Schanovsky, Franz ; Grasser, Tibor | On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2012 |
| 36 | | Franco, J. ; Kaczer, B. ; Eneman, G. ; Roussel, Ph. J. ; Cho, M. ; Mitard, J. ; Witters, L. ; Hoffmann, T. Y. ; Groeseneken, G. ; Crupi, F. ; Grasser, T. | On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFETs | Konferenzbeitrag Inproceedings | 2011 |
| 37 | | Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor | On the Temperature Dependence of NBTI Recovery | Konferenzbeitrag Inproceedings | 2009 |
| 38 | | Grasser, T. ; Waltl, M. ; Goes, W. ; Wimmer, Y. ; El-Sayed, Al-Moatasem Bellah ; Shluger, A.L. ; Kaczer, B. | On the volatility of oxide defects: Activation, deactivation, and transformation | Konferenzbeitrag Inproceedings | 2015 |
| 39 | | Kaczer, Ben ; Grasser, Tibor ; Roussel, Ph. J. ; Franco, J. ; Degraeve, R. ; Ragnarsson, L. A. ; Simoen, E. ; Groeseneken, G. ; Reisinger, H. | Origin of NBTI Variability in Deeply Scaled pFETs | Konferenzbeitrag Inproceedings | 2010 |
| 40 | | Kaczer, B. ; Franco, J. ; Cho, M. ; Grasser, T. ; Roussel, Ph. J. ; Tyaginov, S. ; Bina, M. ; Wimmer, Y. ; Procel, L. M. ; Trojman, L. ; Crupi, F. ; Pitner, G. ; Putcha, V. ; Weckx, P. ; Bury, E. ; Ji, Z. ; De Keersgieter, A. ; Chiarella, T. ; Horiguchi, N. ; Groeseneken, G. ; Thean, A. | Origins and implications of increased channel hot carrier variability in nFinFETs | Konferenzbeitrag Inproceedings | 2015 |
