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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor | A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs | Konferenzbeitrag Inproceedings | 2014 |
| 2 | | Waltl, Michael ; Gös, Wolfgang ; Rott, K. ; Reisinger, H. ; Grasser, Tibor | A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case | Konferenzbeitrag Inproceedings | 2014 |
| 3 | | Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Aichinger, T. ; Hehenberger, Philipp Paul ; Nelhiebel, M. | A Two-Stage Model for Negative Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2009 |
| 4 | | Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Franco, J. ; Kaczer, Ben | A unified perspective of RTN and BTI | Konferenzbeitrag Inproceedings | 2014 |
| 5 | | Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben | Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy | Konferenzbeitrag Inproceedings | 2013 |
| 6 | | Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang | An Energy-Level Perspective of Bias Temperature Instability | Konferenzbeitrag Inproceedings | 2008 |
| 7 | | Giering, K.-U. ; Rott, G. ; Rzepa, G. ; Reisinger, H. ; Puppala, A.K. ; Reich, T. ; Gustin, W. ; Grasser, T. ; Jancke, R. | Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model | Konferenzbeitrag Inproceedings | 2016 |
| 8 | | Starkov, Ivan ; Enichlmair, H. ; Tyaginov, S. E. ; Grasser, Tibor | Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress | Konferenzbeitrag Inproceedings | 2012 |
| 9 | | Kaczer, Ben ; Mahato, S. ; Valduga de Almeida Camargo, V. ; Toledano-Luque, M. ; Roussel, Ph. J. ; Grasser, Tibor ; Catthoor, F. ; Dobrovolny, P. ; Zuber, P. ; Wirth, G.I. ; Groeseneken, G. | Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations | Konferenzbeitrag Inproceedings | 2011 |
| 10 | | Grasser, Tibor | Charge Trapping in Oxides From RTN to BTI | Konferenzbeitrag Inproceedings | 2011 |
| 11 | | Toledano-Luque, M. ; Kaczer, Ben ; Simoen, E. ; Degraeve, R. ; Franco, J. ; Roussel, Ph. J. ; Grasser, Tibor ; Groeseneken, G. | Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs | Konferenzbeitrag Inproceedings | 2012 |
| 12 | | Weckx, P. ; Kaczer, Ben ; Toledano-Luque, M. ; Grasser, Tibor ; Roussel, Ph. J. ; Kukner, H. ; Raghavan, P. ; Catthoor, F. ; Groeseneken, G. | Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM | Konferenzbeitrag Inproceedings | 2013 |
| 13 | | Pobegen, G. ; Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor | Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness | Konferenzbeitrag Inproceedings | 2010 |
| 14 | | Tyaginov, S. E. ; Gös, Wolfgang ; Grasser, Tibor ; Sverdlov, Viktor ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz | Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal | Konferenzbeitrag Inproceedings | 2009 |
| 15 | | Pobegen, Gregor ; Nelhiebel, Michael ; Grasser, Tibor | Detrimental impact of hydrogen passivation on NBTI and HC degradation | Konferenzbeitrag Inproceedings | 2013 |
| 16 | | Hehenberger, Philipp Paul ; Aichinger, T. ; Grasser, Tibor ; Gös, Wolfgang ; Triebl, Oliver ; Kaczer, Ben ; Nelhiebel, M. | Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique | Konferenzbeitrag Inproceedings | 2009 |
| 17 | | Aichinger, T. ; Lenahan, P. M. ; Grasser, Tibor ; Pobegen, G. ; Nelhiebel, M. | Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study | Konferenzbeitrag Inproceedings | 2012 |
| 18 | | Grasser, Tibor | Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales | Konferenzbeitrag Inproceedings | 2013 |
| 19 | | Illarionov, Yu. Yu. ; Waltl, M. ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Mueller, T. ; Lemme, M.C. ; Grasser, T. | Hot-carrier degradation in single-layer double-gated graphene field-effect transistors | Konferenzbeitrag Inproceedings | 2015 |
| 20 | | Aichinger, T. ; Puchner, S. ; Nelhiebel, M. ; Grasser, Tibor ; Hutter, H. | Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress | Konferenzbeitrag Inproceedings | 2010 |
