| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Ceric, H. ; de Orio, R.L. ; Cervenka, J. ; Selberherr, S. | A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects | Artikel Article | 2009 |
| 2 | | Grasser, Tibor ; Wagner, Paul-JÜrgen ; Hehenberger, Philipp ; Goes, Wolfgang ; Kaczer, Ben | A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability | Artikel Article | 2008 |
| 3 | | Pobegen, Gregor ; Nelhiebel, Michael ; de Filippis, Stefano ; Grasser, Tibor | Accurate High Temperature Measurements Using Local Polysilicon Heater Structures | Artikel Article | 2013 |
| 4 | | Johnsson, David ; Mayerhofer, Michael ; Willemen, Joost ; Glaser, Ulrich ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias | Avalanche Breakdown Delay in High-Voltage p-n Junctions Caused by Pre-Pulse Voltage From IEC 61000-4-2 ESD Generators | Artikel Article | 2009 |
| 5 | | Ruch, Bernhard ; Pobegen, Gregor ; Rösch, Maximilian ; Vytla, Rajeev Krishna ; Grasser, Tibor | Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs | Artikel Article | 2019 |
| 6 | | Goes, W. ; Karner, M. ; Sverdlov, V. ; Grasser, T. | Charging and Discharging of Oxide Defects in Reliability Issues | Artikel Article | 2008 |
| 7 | | Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben | Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models | Artikel Article | Mar-2008 |
| 8 | | Notermans, Guido ; Ritter, Hans-Martin ; Holland, Steffen ; Pogany, Dionyz | Dynamic Voltage Overshoot During Triggering on an SCR-Type ESD Protection | Artikel Article | Dec-2019 |
| 9 | | Ceric, Hajdin ; Selberherr, Siegfried | Editorial Preface to the Special Section on Electromigration Published in March 2009 | Artikel Article | 2009 |
| 10 | | Mamanee, W. ; Bychikhin, S. ; Johnsson, D. ; Jensen, N. ; Stecher, M. ; Gornik, E. ; Pogany, D. | Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress Pulses | Artikel Article | 2012 |
| 11 | | Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. | Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques | Artikel Article | 2019 |
| 12 | | Stampfer, Bernhard ; Simicic, Marko ; Weckx, Pieter ; Abbasi, Arash ; Kaczer, Ben ; Grasser, Tibor ; Waltl, Michael | Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays | Artikel Article | 2020 |
| 13 | | Chen, S.-H. ; Griffoni, A ; Srivastava, P ; Linten, D ; Thijs, S ; Scholz, M ; Denis, Marcon ; Gallerano, A ; Lafonteese, D ; Concannon, A ; Vashchenko, V.A. ; Hopper, P ; Bychikhin, Sergey ; Pogany, Dionyz ; Van Hove, Marleen ; Decoutere, S. ; Groeseneken, G. | HBM ESD Robustness of GaN-on-Si Schottky Diodes | Artikel Article | Dec-2012 |
| 14 | | Wu, Zhicheng ; Franco, Jacopo ; Vandooren, Anne ; Kaczer, Ben ; Roussel, Philippe ; Rzepa, Gerhard ; Grasser, Tibor ; Linten, Dimitri ; Groeseneken, Guido | Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration | Artikel Article | Jun-2019 |
| 15 | | Aichinger, T. ; Nelhiebel, M. ; Einspieler, S. ; Grasser, Tibor | In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip | Artikel Article | 2010 |
| 16 | | Lenahan, P. M. ; Knowlton, B. ; Conley, J. F. ; Tonti, B. ; Suehle, J. ; Grasser, Tibor | Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop | Artikel Article | 2008 |
| 17 | | Franco, Jacopo ; Kaczer, Ben ; Mitard, Jerome ; Toledano-Luque, Maria ; Roussel, Philippe J. ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido | NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack | Artikel Article | 2013 |
| 18 | | Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael | On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors | Artikel Article | 2021 |
| 19 | | Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A. ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. | On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI | Artikel Article | 2019 |
| 20 | | Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Stampfer, Bernhard ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors | Article Artikel | Sep-2023 |