IEEE Transactions on Device and Materials Reliability

Title Titel
IEEE Transactions on Device and Materials Reliability
 
e-ISSN
1558-2574
 
ISSN
1530-4388
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 1-20 of 29 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ceric, H. ; de Orio, R.L. ; Cervenka, J. ; Selberherr, S. A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern InterconnectsArtikel Article2009
2Grasser, Tibor ; Wagner, Paul-JÜrgen ; Hehenberger, Philipp ; Goes, Wolfgang ; Kaczer, Ben A Rigorous Study of Measurement Techniques for Negative Bias Temperature InstabilityArtikel Article2008
3Pobegen, Gregor ; Nelhiebel, Michael ; de Filippis, Stefano ; Grasser, Tibor Accurate High Temperature Measurements Using Local Polysilicon Heater StructuresArtikel Article2013
4Johnsson, David ; Mayerhofer, Michael ; Willemen, Joost ; Glaser, Ulrich ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias Avalanche Breakdown Delay in High-Voltage p-n Junctions Caused by Pre-Pulse Voltage From IEC 61000-4-2 ESD GeneratorsArtikel Article2009
5Ruch, Bernhard ; Pobegen, Gregor ; Rösch, Maximilian ; Vytla, Rajeev Krishna ; Grasser, Tibor Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETsArtikel Article 2019
6Goes, W. ; Karner, M. ; Sverdlov, V. ; Grasser, T. Charging and Discharging of Oxide Defects in Reliability IssuesArtikel Article2008
7Grasser, Tibor ; Gös, Wolfgang ; Kaczer, Ben Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport ModelsArtikel Article Mar-2008
8Notermans, Guido ; Ritter, Hans-Martin ; Holland, Steffen ; Pogany, Dionyz Dynamic Voltage Overshoot During Triggering on an SCR-Type ESD ProtectionArtikel Article Dec-2019
9Ceric, Hajdin ; Selberherr, Siegfried Editorial Preface to the Special Section on Electromigration Published in March 2009Artikel Article2009
10Mamanee, W. ; Bychikhin, S. ; Johnsson, D. ; Jensen, N. ; Stecher, M. ; Gornik, E. ; Pogany, D. Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress PulsesArtikel Article2012
11Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement TechniquesArtikel Article 2019
12Stampfer, Bernhard ; Simicic, Marko ; Weckx, Pieter ; Abbasi, Arash ; Kaczer, Ben ; Grasser, Tibor ; Waltl, Michael Extraction of Statistical Gate Oxide Parameters From Large MOSFET ArraysArtikel Article 2020
13Chen, S.-H. ; Griffoni, A ; Srivastava, P ; Linten, D ; Thijs, S ; Scholz, M ; Denis, Marcon ; Gallerano, A ; Lafonteese, D ; Concannon, A ; Vashchenko, V.A. ; Hopper, P ; Bychikhin, Sergey ; Pogany, Dionyz ; Van Hove, Marleen ; Decoutere, S. ; Groeseneken, G. HBM ESD Robustness of GaN-on-Si Schottky DiodesArtikel Article Dec-2012
14Wu, Zhicheng ; Franco, Jacopo ; Vandooren, Anne ; Kaczer, Ben ; Roussel, Philippe ; Rzepa, Gerhard ; Grasser, Tibor ; Linten, Dimitri ; Groeseneken, Guido Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential IntegrationArtikel Article Jun-2019
15Aichinger, T. ; Nelhiebel, M. ; Einspieler, S. ; Grasser, Tibor In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on ChipArtikel Article2010
16Lenahan, P. M. ; Knowlton, B. ; Conley, J. F. ; Tonti, B. ; Suehle, J. ; Grasser, Tibor Introduction to the Special Issue on the 2007 International Integrated Reliability WorkshopArtikel Article2008
17Franco, Jacopo ; Kaczer, Ben ; Mitard, Jerome ; Toledano-Luque, Maria ; Roussel, Philippe J. ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric StackArtikel Article2013
18Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021
19Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A. ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTIArtikel Article 2019
20Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Stampfer, Bernhard ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ TransistorsArticle Artikel Sep-2023