IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 81-96 of 96 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
81Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Mitard, Jérôme ; Cho, Moonju ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTIArtikel Article2013
82Jüngling, Werner ; Pichler, P. ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical MethodsArtikel Article 1985
83Pichler, P. ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, E. ; Pötzl, Hans Simulation of Critical IC-Fabrication StepsArtikel Article 1985
84Toifl, Alexander ; Simonka, Vito ; Hössinger, Andreas ; Selberherr, Siegfried ; Grasser, Tibor ; Weinbub, Josef Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET CharacteristicsArtikel Article Jul-2019
85Mahmoudi, Hiwa ; Hofbauer, Michael ; Steindl, Bernhard ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst Statistical Study of Intrinsic Parasitics in an SPAD-Based Integrated Fiber Optical ReceiverArtikel Article 2019
86Hosseini, Manouchehr ; Elahi, Mohammad ; Pourfath, Mahdi ; Esseni, David Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se)Artikel Article 2015
87Sharma, Shashikant ; Bayer, B. C. ; Skakalova, Viera ; Singh, Ghanshyam ; Periasamy, Chinnamuthan Structural, Electrical and UV Detection Properties of ZnO/Si Heterojunction DiodesArtikel Article 2016
88Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part I: ExperimentalArtikel Article 2017
89Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part II: TheoryArtikel Article 2017
90Kuzmik, Jan ; Pozzovivo, Gianmauro ; Abermann, Stephan ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Bertagnolli, Emmerich ; Strasser, Gottfried ; Pogany, Dionyz Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO₂ or HfO₂Artikel Article2008
91Ungersboeck, E. ; Dhar, S. ; Karlowatz, G. ; Sverdlov, V. ; Kosina, H. ; Selberherr, S. The Effect of General Strain on the Band Structure and Electron Mobility of SiliconArtikel Article2007
92Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021
93Kuzmik, Jan ; Bychikhin, Sergey ; neuburger, Martin ; Dadgar, A ; Krost, A ; Kohn, Erhard ; Pogany, Dionyz Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on SiliconArtikel Article2005
94Khaliji, Kaveh ; Noei, Maziar ; Tabatabaei, Seyed Mohammad ; Pourfath, Mahdi ; Fathipour, Morteza ; Abdi, Yaser Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial StrainArtikel Article2013
95Brand, H. ; Selberherr, S. Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-ThyristorArtikel Article1995
96Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time ExtrapolationArtikel Article 2018