JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

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Journal description

Title Titel
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 
e-ISSN
2166-2754
 
ISSN
2166-2746
 
Publisher Herausgeber
A V S AMER INST PHYSICS
 
Publisher's Address Herausgeber Adresse
STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, USA, NY, 11747-4502
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Subject:  Materials Chemistry
Subject:  Instrumentation
Date Issued:  [2010 TO 2019]
Date Issued:  2011

Results 1-11 of 11 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Bethge, O. ; Abermann, S. ; Henkel, C. ; Smoliner, J. ; Bertagnolli, E. ; Straif, C. J. ; Hutter, H. Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitorsArtikel Article 2011
2Roediger, Peter ; Wanzenboeck, Heinz D. ; Hochleitner, Gottfried ; Bertagnolli, Emmerich Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etchingArtikel Article 2011
3Čičo, K. ; Hušeková, K. ; Ťapajna, M. ; Gregušová, D. ; Stoklas, R. ; Kuzmík, J. ; Carlin, J.-F. ; Grandjean, N. ; Pogany, D. ; Fröhlich, K. Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectricsArtikel Article2011
4Langegger, Rupert ; Lugstein, Alois ; Glaser, Markus ; Bertagnolli, Emmerich ; Steiger-Thirsfeld, Andreas High temperature focused ion beam response of graphite resulting in spontaneous nanosheet formationArtikel Article2011
5Starkov, I. ; Tyaginov, S. ; Enichlmair, H. ; Cervenka, J. ; Jungemann, C. ; Carniello, S. ; Park, J. M. ; Ceric, H. ; Grasser, T. Hot-Carrier Degradation Caused Interface State Profile-Simulation versus ExperimentArtikel Article2011
6Roediger, Peter ; Mijic, Mario ; Zeiner, Clemens ; Lugstein, Alois ; Wanzenboeck, Heinz D. ; Bertagnolli, Emmerich Local, direct-write, damage-free thinning of germanium nanowiresArtikel Article 2011
7Schanovsky, F. ; Gös, W. ; Grasser, T. Multiphonon Hole Trapping from First PrinciplesArtikel Article2011
8Ebm, Christoph ; Hobler, Gerhard ; Waid, Simon ; Wanzenboeck, Heinz D. Quantitative simulation of ion-beam induced deposition of nanostructuresArtikel Article 2011
9Makarov, A. ; Sverdlov, V. ; Selberherr, S. Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo SimulationsArtikel Article2011
10Toledano-Luque, M. ; Kaczer, B. ; Roussel, Ph. ; Cho, M. J. ; Grasser, T. ; Groeseneken, G. Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature StressArtikel Article2011
11Dedyk, Antonina ; Pavlova, Yulia ; Karmanenko, Sergey ; Semenov, Alexander ; Semikin, Dmitry ; Pakhomov, Oleg ; Starkov, Alexander ; Starkov, Ivan Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric CeramicsArtikel Article2011