Forschungsbereich Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360-01 - Forschungsbereich Mikroelektronik
 
Code Kennzahl
E360-01
 
Type of Organization Organisationstyp
Research Division
Parent OrgUnit Übergeordnete Organisation
 
Active Aktiv
 


Results 41-55 of 55 (Search time: 0.018 seconds).

PreviewAuthor(s)TitleTypeIssue Date
41Jørstad, Nils Petter ; Fiorentini, Simone ; Loch, Wilton Jaciel ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Finite Element Modeling of Spin-Orbit TorquesArtikel Article 2022
42Bendra, M. ; Fiorentini, S. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. Interface Effects in Ultra-Scaled MRAM CellsArtikel Article 2022
43Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Artikel Article 2022
44Wilhelmer, Christoph ; Waldhoer, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole captureArtikel Article 2022
45Fiorentini, Simone ; Ender, Johannes ; Selberherr, Siegfried ; Goes, Wolfgang ; Sverdlov, Viktor Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method ApproachArticle Artikel 2022
46Waltl-2021-Microelectronics Reliability-vor.pdf.jpgWaltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of single-defects on the variability of CMOS inverter circuitsArticle Artikel Nov-2021
47Ender-2021-Microelectronics Reliability-vor.pdf.jpgEnder, Johannes ; Lacerda de Orio, Roberto ; Fiorentini, Simone ; Selberherr, Siegfried ; Goes, W. ; Sverdlov, Viktor Improving failure rates in pulsed SOT-MRAM switching by reinforcement learningArticle Artikel Nov-2021
48Filipovic-2021-Microelectronics Reliability-vor.pdf.jpgFilipovic, Lado Theoretical examination of thermo-migration in novel platinum microheatersArticle Artikel Aug-2021
49Ansaripour, Iman ; Pourfath, Mahdi Charge-Induced Two-Step Structural Phase Transition in the MoTe₂–WSeTe Hetero-BilayerArticle Artikel 15-Jul-2021
50Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021
51Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021
52Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of Single-Defects on the Variability of CMOS Inverter CircuitsArtikel Article 2021
53Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Tyaginov, Stanislav ; Shluger, Alexander L. ; Grasser, Tibor Ab Initio treatment of silicon-hydrogen bond rupture at Si/SiO₂ interfacesArtikel Article 15-Nov-2019
54Gnam-2018-Micromachines-vor.pdf.jpgGnam, Lukas ; Manstetten, Paul ; Hössinger, Andreas ; Selberherr, Siegfried ; Weinbub, Josef Accelerating Flux Calculations Using Sparse SamplingArticle Artikel Nov-2018
55Lacerda de Orio, Roberto ; Ceric, Hajdin ; Selberherr, Siegfried Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration StressArtikel Article 2008