Name Card

Full name Familienname, Vorname
Rzepa, Gerhard
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 65 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Filipovic, Lado ; Baumgartner, Oskar ; Klemenschits, Xaver ; Piso, Julius ; Bobinac, Josip ; Reiter, Tobias ; Strof, Georg ; Rzepa, Gerhard ; Stanojevic, Zlatan ; Karner, Markus DTCO flow for air spacer generation and its impact on power and performance at N7Article Artikel Jan-2023
2Filipovic, Lado ; Baumgartner, Oskar ; Piso, Julius ; Bobinac, Josip ; Reiter, Tobias ; Strof, G ; Rzepa, Gerhard ; Stanojevic, Zlatan ; Karner, Markus DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7Konferenzbeitrag Inproceedings 2022
3Waltl-2021-Microelectronics Reliability-vor.pdf.jpgWaltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of single-defects on the variability of CMOS inverter circuitsArticle Artikel Nov-2021
4Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of Single-Defects on the Variability of CMOS Inverter CircuitsArtikel Article 2021
5Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article 8-Aug-2020
6Michl, J. ; Grill, A. ; Claes, D. ; Rzepa, G. ; Kaczer, B. ; Linten, D. ; Radu, I. ; Grasser, T. ; Waltl, M. Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic TemperaturesKonferenzbeitrag Inproceedings 2020
7Vasilev, Alexander ; Jech, Markus ; Grill, Alexander ; Rzepa, Gerhard ; Schleich, Christian ; Makarov, Alexander ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael ; Tyaginov, Stanislav Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC TransistorsKonferenzbeitrag Inproceedings 2020
8Waltl, Michael ; Stampfer, Bernhard ; Rzepa, Gerhard ; Kaczer, Ben ; Grasser, Tibor Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS TransistorsArtikel Article 2020
9Grasser, T. ; Kaczer, B. ; O'Sullivan, B. ; Rzepa, G. ; Stampfer, B. ; Waltl, M. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen ReleaseKonferenzbeitrag Inproceedings 2020
10O'Sullivan, B.J. ; Ritzenthaler, R. ; Rzepa, G. ; Wu, Z. ; Litta, E. Dentoni ; Richard, O. ; Conard, T. ; Machkaoutsan, V. ; Fazan, P. ; Kim, C. ; Franco, J. ; Kaczer, B. ; Grasser, T. ; Spessot, A. ; Linten, D ; Horiguchi, N. Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate DevicesKonferenzbeitrag Inproceedings2019
11Wu, Zhicheng ; Franco, Jacopo ; Claes, Dieter ; Rzepa, Gerhard ; Roussel, Philippe J. ; Collaert, Nadine ; Groeseneken, Guido ; Linten, Dimitri ; Grasser, Tibor ; Kaczer, Ben Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and ModelingKonferenzbeitrag Inproceedings2019
12Franco, J. ; Wu, Z. ; Rzepa, G. ; Vandooren, A. ; Arimura, H. ; Claes, D. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration SchemesKonferenzbeitrag Inproceedings 2019
13Wu, Zhicheng ; Franco, J. ; Vandooren, Anne ; Kaczer, Ben ; Roussel, Philippe ; Rzepa, Gerhard ; Grasser, Tibor Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential IntegrationArtikel Article 2019
14Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A. ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTIArtikel Article 2019
15Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: TheoryArtikel Article 2019
16Schleich, C. ; Berens, J. ; Rzepa, G. ; Pobegen, G. ; Rescher, G. ; Tyaginov, S. ; Grasser, T. ; Waltl, M. Physical Modeling of Bias Temperature Instabilities in SiC MOSFETsKonferenzbeitrag Inproceedings 2019
17Scharlotta, Jean-Yean ; Bersuker, Gennadi ; Tyaginov, S. E. ; Young, Chadwing ; Haase, Gaddi ; Rzepa, Gerhard ; Waltl, Michael ; Chohan, Talha ; Iyer, Subramanian ; Kotov, Alexander ; Zambelli, Cristian ; Guarin, Fernando ; Puglisi, Francesco Maria ; Ostermaier, C IIRW 2019 Discussion Group II: Reliability for Aerospace ApplicationsKonferenzbeitrag Inproceedings2019
18Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level ModelingArtikel Article 2019
19Tyaginov, S.E. ; Jech, M. ; Rzepa, G. ; Grill, A. ; El-Sayed, A.-M. ; Pobegen, G. ; Makarov, A. ; Grasser, T. Border Trap Based Modeling of SiC Transistor Transfer CharacteristicsKonferenzbeitrag Inproceedings 2018
20Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTIKonferenzbeitrag Inproceedings 2018

Contributing Publications Mitbeteiligte Publikationen

Results 1-1 of 1 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Knobloch Theresia - 2016 - Characterization and physical modeling of degradation...pdf.jpgKnobloch, Theresia Characterization and physical modeling of degradation in MoS2 transistorsThesis Hochschulschrift 2016