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Full name Familienname, Vorname
Abermann, Stephan
 
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Results 1-20 of 66 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Bethge, Ole ; Zimmermann, Christina ; Lutzer, Bernhard ; Simsek, Sinan ; Abermann, Stephan ; Bertagnolli, Emmerich ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT ScalabilityKonferenzbeitrag Inproceedings2014
2Bethge, Ole ; Zimmermann, Christina ; Lutzer, Bernhard ; Simsek, Sinan ; Abermann, Stephan ; Bertagnolli, Emmerich ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT ScalabilityArtikel Article2014
3Bethge, Ole ; Nobile, Michele ; Abermann, Stephan ; Glaser, Markus ; Bertagnolli, Emmerich ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cellArtikel Article 2013
4Bethge, O. ; Henkel, Christoph ; Abermann, S. ; Pozzovivo, G. ; Stoeger-Pollach, M. ; Werner, W.S.M. ; Smoliner, J. ; Bertagnolli, E. Stability of La₂O₃ and GeO₂ passivated Ge surfaces during ALD of ZrO₂ high-k dielectricArtikel Article 2012
5Bethge, O ; Pozzovivo, G ; Henkel, Christoph ; Abermann, S ; Bertagnolli, E Fabrication of highly ordered nanopillar arrays and defined etching of ALD-grown all-around platinum filmsArtikel Article 2012
6Bethge, Ole ; Henkel, Christoph ; Abermann, Stephan ; Hutter, H. ; Smoliner, Jürgen ; Bertagnolli, Emmerich Impact of the ALD process on the inversion capacitance in Ge based MOS capacitorsPräsentation Presentation2012
7Henkel, C. ; Abermann, S. ; Bethge, O. ; Pozzovivo, G. ; Klang, P. ; Stöger-Pollach, M. ; Bertagnolli, E. Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dieelectricsArtikel Article2011
8Basnar, Bernhard ; Litschauer, Marco ; Abermann, Stefan ; Bertagnolli, Emmerich ; Strasser, Gottfried ; Neouze, Marie-Alexandra Layer-by-layer assembly of titania nanoparticles based ionic networksArtikel Article2011
9Basnar, Bernhard ; Litschauer, Marco ; Abermann, Stephan ; Bertagnolli, Emmerich ; Strasser, Gottfried ; Néouze, Marie-Alexandra Analysing nanoparticle monolayers covalently linked to silicon substratesKonferenzbeitrag Inproceedings2011
10Bethge, Ole ; Abermann, Stephan ; Henkel, Christoph ; Stöger-Pollach, Michael ; Smoliner, Jürgen ; Bertagnolli, Emmerich ALD grown La2O3 for Ge-based MOS-device applicationsPräsentation Presentation2011
11Bethge, O. ; Abermann, S. ; Henkel, C. ; Smoliner, J. ; Bertagnolli, E. ; Straif, C. J. ; Hutter, H. Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitorsArtikel Article 2011
12Abermann Stephan - 2011 - Utilization of the potential of biomimetics in...pdf.jpgAbermann, Stephan Utilization of the potential of biomimetics in sustainable architecture : an investigation focusing on current developments in AustriaThesis Hochschulschrift 2011
13Henkel, C. ; Abermann, S. ; Bethge, O. ; Pozzovivo, G. ; Klang, P. ; Reiche, M. ; Bertagnolli, E. Ge p-MOSFETs With Scaled ALD 𝙻𝚊₂𝙾₃/𝚉𝚛𝙾₂ Gate DielectricsArtikel Article Dec-2010
14Bethge, O. ; Abermann, S. ; Henkel, C. ; Straif, C. J. ; Hutter, H. ; Smoliner, J. ; Bertagnolli, E. Process temperature dependent high frequency capacitance-voltage response of ZrO₂/GeO₂/germanium capacitorsArtikel Article2010
15Henkel, Christoph ; Abermann, Stephan ; Bethge, Ole ; Pozzovivo, Gianmauro ; Bertagnolli, Emmerich Ge SB-p-MOSFET with ALD ZrO2/La2 O3 DielectricsPräsentation Presentation2010
16Henkel, Christoph ; Bethge, Ole ; Abermann, Stephan ; Puchner, Stefan ; Hutter, Herbert ; Bertagnolli, Emmerich Pt-assisted oxidation of "100...-Ge/high-k interfaces and improvement of their electrical qualityArtikel Article2010
17Abermann, S. ; Henkel, C. ; Bethge, O. ; Pozzovivo, G. ; Klang, P. ; Bertagnolli, E. Stabilization of a very high- k crystalline ZrO 2 phase by post deposition annealing of atomic layer deposited ZrO 2 /La 2 O 3 dielectrics on germaniumArtikel Article2010
18Bethge, Ole ; Abermann, Stephan ; Henkel, Christoph ; Straif, C ; Hutter, H. ; Smoliner, Jürgen ; Bertagnolli, Emmerich ALD of high-k oxides on (100) Ge-substrates: Scaling ability and interface engineering for MOS-device applicationsPräsentation Presentation2010
19Henkel, Christoph ; Bethge, Ole ; Abermann, Stephan ; Puchner, S. ; Hutter, H. ; Reiche, Manfred ; Bertagnolli, Emmerich Atomic Layer Deposition of high-k dielectrics on GOI SubstratesPräsentation Presentation2010
20Henkel, Christoph ; Abermann, Stephan ; Bethge, Ole ; Bertagnolli, Emmerich Pt/Ge Schottky-Barrier Reduction by Rapid Thermal Diffusion of P DopantsBuchbeitrag Book Contribution2010