Behrle, R., Den Hertog, M. I., Lugstein, A., Weber, W. M., & Sistani, M. (2023). Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits. In ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (pp. 37–40). IEEE. https://doi.org/10.34726/5319
E362-02 - Forschungsbereich Nanoelektronische Bauelemente E362 - Institut für Festkörperelektronik
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Published in:
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
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ISBN:
979-8-3503-0423-7
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Date (published):
Sep-2023
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Event name:
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
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Event date:
11-Sep-2023 - 14-Sep-2023
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Event place:
Lisbon, Portugal
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Number of Pages:
4
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Publisher:
IEEE
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Keywords:
Spectroscopy; bias; Ge nanowires; transistors
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Abstract:
In this paper, we exploit the nanometer scale properties of Ge based Schottky barrier field-effect transistors (SBFETs) with monocrystalline Al contacts, fusing the concept of reconfiguration and negative differential resistance (NDR) in a single device. Temperature dependent bias spectroscopy is used to investigate the electronic transport in the NDR regime leading to profound understanding of the involved physical transport mechanisms. Importantly, the obtained SBFETs are capable of shifting the NDR-peak by electrostatic gating. Thus, a cascode of such devices results in overlapping NDR regions, which allows the realization of new circuit topologies beyond the capabilities of conventional CMOS.
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Project title:
Metastable nanoscale solid solutions and their integration: I 5383-N (FWF - Österr. Wissenschaftsfonds)
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Research Areas:
Materials Characterization: 50% Surfaces and Interfaces: 50%
