Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits

Behrle, Raphael; Den Hertog, Martien I.; Lugstein, Alois; Weber, Walter M.; Sistani, Masiar

doi:10.1109/ESSDERC59256.2023.10268478

Record link:

http://hdl.handle.net/20.500.12708/191001
https://doi.org/10.34726/5319

Title:

Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits

Citation:

Behrle, R., Den Hertog, M. I., Lugstein, A., Weber, W. M., & Sistani, M. (2023). Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits. In ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (pp. 37–40). IEEE. https://doi.org/10.34726/5319

reposiTUm DOI:

10.34726/5319

CatalogPlus:

AC17204792

Publisher DOI:

10.1109/ESSDERC59256.2023.10268478

Publication Type:

Inproceedings - Full-Paper Contribution

Language:

English

Authors:

Behrle, Raphael
Den Hertog, Martien I.
Lugstein, Alois
Weber, Walter M.
Sistani, Masiar

Organisational Unit:

E362-02 - Forschungsbereich Nanoelektronische Bauelemente
E362 - Institut für Festkörperelektronik

Published in:

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

ISBN:

979-8-3503-0423-7

Date (published):

Sep-2023

Event name:

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

Event date:

11-Sep-2023 - 14-Sep-2023

Event place:

Lisbon, Portugal

Number of Pages:

Publisher:

IEEE

Peer reviewed:

Yes

Keywords:

Spectroscopy; bias; Ge nanowires; transistors

Abstract:

In this paper, we exploit the nanometer scale properties of Ge based Schottky barrier field-effect transistors (SBFETs) with monocrystalline Al contacts, fusing the concept of reconfiguration and negative differential resistance (NDR) in a single device. Temperature dependent bias spectroscopy is used to investigate the electronic transport in the NDR regime leading to profound understanding of the involved physical transport mechanisms. Importantly, the obtained SBFETs are capable of shifting the NDR-peak by electrostatic gating. Thus, a cascode of such devices results in overlapping NDR regions, which allows the realization of new circuit topologies beyond the capabilities of conventional CMOS.

Project title:

Metastable nanoscale solid solutions and their integration: I 5383-N (FWF - Österr. Wissenschaftsfonds)

Research Areas:

Materials Characterization: 50%
Surfaces and Interfaces: 50%

Science Branch:

2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%

License:

In Copyright

Appears in Collections:

Conference Paper