Record link: 
http://hdl.handle.net/20.500.12708/193527
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Title: 
Study of Self-Heating and its Effects in SOT-STT-MRAM
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Citation: 
Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2023). Study of Self-Heating and its Effects in SOT-STT-MRAM. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319549
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Publisher DOI: 
10.23919/SISPAD57422.2023.10319549
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Hadamek, Tomas 
Jorstad, Nils Petter 
Goes, Wolfgang 
Selberherr, Siegfried 
Sverdlov, Viktor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 
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ISBN: 
978-4-86348-803-8
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DOI of the book: 
10.23919/SISPAD57422.2023
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Date (published): 
20-Nov-2023
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Event name: 
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023) 
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Event date: 
27-Sep-2023 - 29-Sep-2023
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Event place: 
Kobe, Japan
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Number of Pages: 
4
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Publisher: 
IEEE
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Keywords: 
Spintronics; SOT-MRAM; Self-Heating; Temperature Scaling; Incubation Time
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Abstract: 
We fully couple magnetization, charge, spin, and temperature dynamics to study the switching of the combined spin-orbit torque (SOT) - spin-transfer torque (STT) magne-toresistive random access memory (MRAM). To account for the increased temperature, the material parameters are scaled. In comparison to the constant temperature model, our full model shows an incubation period due to the rising temperature, in agreement with experimental data. Furthermore, we demonstrate field-free switching of the SOT-STT MRAM cell and show that the incubation time can be minimized, when sufficiently high voltages are applied.
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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