Antonov, V. A., Tikhonenko, F. V., Popov, V. P., Miakonkikh, A. V., Rudenko, K. V., & Sverdlov, V. (2024). SOS pseudo-FeFETs after Furnace or rapid annealings and thinning by thermal Oxidation. Solid-State Electronics, 215, 1–6. https://doi.org/10.1016/j.sse.2023.108821
The silicon-on-sapphire (SOS) pseudo-MOSFETs with high-k buried hafnium dioxide interlayer (IL) were investigated after the hydrogen induced Si and HfO₂ layer transfer on c-sapphire wafers and annealing at 600–1100 °C. HRTEM, GIXRD and Raman measurements were used to reveal the hafnia phases for furnace and rapid thermal annealings (FA and RTA).
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Project title:
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells)
