MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4H-SiC

Abstract

We have performed a molecular dynamics study for the recrystallization of Al-implanted 4H-SiC in dependence of annealing temperature and time. We show in that the principal physical picture of recrystallization is in line with experiments and former MD simulations with respect to the activation energy of recrystallization and its onset temperature (the minimum temperature necessary to initiate full recyrstallization of amorphous SiC). The annealed structures are poly-crystalline and show point defects, defect complexes, but also extended defects like interstitial clusters and stacking faults in dependence of the annealing temperature. Most of the residual defects are thermally stable and need longer annealing times than those accessible with MD simulations alone.