(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS<sub>2</sub>Transistors

Knobloch, Theresia; Rzepa, Gerhard; Illarionov, Yury Yuryevich; Waltl, Michael; Polyushkin, Dmitry; Pospischil, Andreas; Furchi, Marco; Mueller, Thomas; Grasser, Tibor

doi:10.1149/08001.0203ecst

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Record link:

http://hdl.handle.net/20.500.12708/29530

Title:

(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS<sub>2</sub>Transistors

Citation:

Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., & Grasser, T. (2017). (Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS₂Transistors. In D. Misra, S. De Gendt, M. Houssa, K. Kita, & D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst

Publisher DOI:

10.1149/08001.0203ecst

Publication Type:

Book Contribution - Edited Volume Contribution

Authors: