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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Tyaginov, Stanislav ; Grill, Alexander ; Vandemaele, Michiel ; Grasser, Tibor ; Hellings, Geert ; Makarov, Alexander ; Jech, Markus ; Linten, Dimitri ; Kaczer, Ben | A Compact Physics Analytical Model for Hot-Carrier Degradation | Konferenzbeitrag Inproceedings  | 2020 |
| 2 | | Wu, Zhicheng ; Franco, Jacopo ; Claes, Dieter ; Rzepa, Gerhard ; Roussel, Philippe J. ; Collaert, Nadine ; Groeseneken, Guido ; Linten, Dimitri ; Grasser, Tibor ; Kaczer, Ben | Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling | Konferenzbeitrag Inproceedings | 2019 |
| 3 | | Kaczer, Ben ; Rzepa, Gerhard ; Franco, J. ; Weckx, P. ; Chasin, A ; Putcha, Vamsi ; Bury, E. ; Simicic, Marko ; Roussel, Ph. J. ; Hellings, Geert ; Veloso, A. ; Matagne, Ph ; Grasser, Tibor ; Linten, D | Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs | Konferenzbeitrag Inproceedings | 2017 |
| 4 | | Chasin, A ; Franco, J. ; Kaczer, Ben ; Putcha, Vamsi ; Weckx, P. ; Ritzenthaler, Romain ; Mertens, H. ; Horiguchi, N. ; Linten, D ; Rzepa, Gerhard | BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors | Konferenzbeitrag Inproceedings | 2017 |
| 5 | | Grill, A. ; Stampfer, B. ; Waltl, M. ; Im, Ki-Sik ; Lee, J.-H. ; Ostermaier, C. ; Ceric, H. ; Grasser, T. | Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs | Konferenzbeitrag Inproceedings | 2017 |
| 6 | | Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben | Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors | Konferenzbeitrag Inproceedings | 2018 |
| 7 | | Waltl, Michael | Defect Spectroscopy in SiC Devices | Konferenzbeitrag Inproceedings | 2020 |
| 8 | | Rzepa, Gerhard ; Franco, J. ; Subirats, A ; Jech, Markus ; Chasin, A ; Grill, Alexander ; Waltl, Michael ; Knobloch, Theresia ; Stampfer, Bernhard ; Chiarella, T. ; Horiguchi, N. ; Ragnarsson, L. A. ; Linten, D ; Kaczer, Ben ; Grasser, Tibor | Efficient Physical Defect Model Applied to PBTI in High-κ Stacks | Konferenzbeitrag Inproceedings | 2017 |
| 9 | | Vandemaele, Michiel ; Kaczer, Ben ; Tyaginov, Stanislav ; Stanojevic, Zlatan ; Makarov, Alexander ; Chasin, Adrian ; Bury, Erik ; Mertens, Hans ; Linten, Dimitri ; Groeseneken, Guido | Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs | Konferenzbeitrag Inproceedings | 2019 |
| 10 | | O'Sullivan, B.J. ; Ritzenthaler, R. ; Rzepa, G. ; Wu, Z. ; Litta, E. Dentoni ; Richard, O. ; Conard, T. ; Machkaoutsan, V. ; Fazan, P. ; Kim, C. ; Franco, J. ; Kaczer, B. ; Grasser, T. ; Spessot, A. ; Linten, D ; Horiguchi, N. | Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices | Konferenzbeitrag Inproceedings | 2019 |
| 11 | | Ruch, Bernhard ; Pobegen, Gregor ; Schleich, Christian ; Grasser, Tibor | Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping | Konferenzbeitrag Inproceedings | 2020 |
| 12 | | Grasser, Tibor ; Waltl, Michael ; Puschkarsky, Katja ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, G. ; Reisinger, H. ; Arimura, H ; Kaczer, Ben | Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress | Konferenzbeitrag Inproceedings | 2017 |
| 13 | | Makarov, A. ; Kaczer, B. ; Roussel, Ph. ; Chasin, A. ; Grill, A. ; Vandemaele, M. ; Hellings, G. ; El-Sayed, A.-M. ; Grasser, T. ; Linten, D. ; Tyaginov, S. | Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs | Konferenzbeitrag Inproceedings | 2019 |
| 14 | | Kruv, A. ; Kaczer, B. ; Grill, A ; Gonzalez, M. ; Franco, J. ; Linten, D. ; Goes, W. ; Grasser, T. ; De Wolf, I. | On the impact of mechanical stress on gate oxide trapping | Konferenzbeitrag Inproceedings | 2020 |
| 15 | | Suhir, Ephraim ; Bensoussan, Alain ; Khatibi, G. ; Nicolics, Johann | Probabilistic Design for Reliability in Electronics and Photonics: Role, Significance, Attributes, Challenges | Konferenzbeitrag Inproceedings | 2014 |
| 16 | | Michl, J. ; Grill, A. ; Claes, D. ; Rzepa, G. ; Kaczer, B. ; Linten, D. ; Radu, I. ; Grasser, T. ; Waltl, M. | Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures | Konferenzbeitrag Inproceedings | 2020 |
| 17 | | Grill, A. ; Bury, E. ; Michl, J. ; Tyaginov, S. ; Linten, D. ; Grasser, T. ; Parvais, B. ; Kaczer, B. ; Waltl, M. ; Radu, I. | Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures | Konferenzbeitrag Inproceedings | 2020 |
| 18 | | Illarionov, Yury ; Molina- Mendoza, Aday J. ; Waltl, Michael ; Knobloch, Theresia ; Furchi, Marco Mercurio ; Mueller, T. ; Grasser, Tibor | Reliability of next-generation field-effect transistors with transition metal dichalcogenides | Konferenzbeitrag Inproceedings | 2018 |
| 19 | | Illarionov, Yu. Yu. ; Waltl, M. ; Furchi, M. M. ; Mueller, T. ; Grasser, T. | Reliability of single-layer MoS<inf>2</inf> field-effect transistors with SiO<inf>2</inf> and hBN gate insulators | Konferenzbeitrag Inproceedings | 2016 |
| 20 | | Berens, J. ; Weger, M. ; Pobegen, G. ; Aichinger, T. ; Rescher, G. ; Schleich, C. ; Grasser, T. | Similarities and Differences of BTI in SiC and Si Power MOSFETs | Konferenzbeitrag Inproceedings | 2020 |
