IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Author:  Grasser, T.

Results 21-35 of 35 (Search time: 0.007 seconds).

PreviewAuthor(s)TitleTypeIssue Date
21Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article 2019
22Pobegen, Gregor ; Grasser, Tibor On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time ScaleArtikel Article2013
23Feil, M. W. ; Puschkarsky, K. ; Gustin, W. ; Reisinger, H. ; Grasser, T. On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET DevicesArtikel Article 2021
24Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Reisinger, H. ; Aichinger, T. ; Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Schanovsky, Franz ; Franco, J. ; Toledano-Luque, M. ; Nelhiebel, M. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide TrapsArtikel Article 2011
25Schleich, Christian ; Waldhoer, Dominic ; Waschneck, Katja ; Feil, Maximilian W. ; Reisinger, Hans ; Grasser, Tibor ; Waltl, Michael Physical Modeling of Charge Trapping in 4H-SiC DMOSFET TechnologiesArtikel Article 2021
26Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018
27Bina, Markus ; Tyaginov, Stanislav ; Franco, Jacopo ; Rupp, Karl ; Wimmer, Yannick ; Osintsev, Dmitry ; Kaczer, Ben ; Grasser, Tibor Predictive Hot-Carrier Modeling of n-Channel MOSFETsArtikel Article2014
28Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
29Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, María ; Roussel, Philippe J. ; Kauerauf, Thomas ; Mitard, Jérôme ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability IssuesArtikel Article2013
30Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Mitard, Jérôme ; Cho, Moonju ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTIArtikel Article2013
31Toifl, Alexander ; Simonka, Vito ; Hössinger, Andreas ; Selberherr, Siegfried ; Grasser, Tibor ; Weinbub, Josef Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET CharacteristicsArtikel Article Jul-2019
32Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part I: ExperimentalArtikel Article 2017
33Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part II: TheoryArtikel Article 2017
34Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021
35Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time ExtrapolationArtikel Article 2018